HYS64V16300GU Infineon, HYS64V16300GU Datasheet - Page 11

• Manufacturer Part Number: HYS64V16300GU
• Description: 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
• Manufacturer: Infineon

INFINEON Technologies
Notes
3. All AC characteristics are shown on SDRAM component level.
4. AC timing tests have
5. If clock rising time is longer than 1 ns, a time (
6. Rated at 1.4 V
7. If
8. Anytime the Refresh Period has been exceeded, a minimum of two Auto-Refresh (CBR)
9. Timing is asynchronous. If setup time is not met by rising edge of the clock then the CKE signal
10.Self-Refresh Exit is a synchronous operation and begins on the second positive clock edge after
11.This is referenced to the time at which the output achieves the open circuit condition, not to
A Serial Presence Detect storage device—E
module configuration, speed, etc. is written into the E
Presence Detect protocol (I
An initial pause of 100 s is required after power-up, then a Precharge All Banks command must
be given followed by eight Auto-Refresh (CBR) cycles before the Mode Register Set Operation
can begin.
point. The transition time is measured between
t
with a 50 pF only, without any resistive termination and with a input signal of 1 V/ns edge rate
between 0.8 V and 2.0 V.
commands must be given to “wake-up” the device.
is assumed latched on the next cycle.
CKE returns high. Self-Refresh Exit is not complete until a time period equal to
after the Self Refresh Exit command is registered.
output voltage levels.
T
t
= 1 ns with the AC output load circuit show. Specified
T
is longer than 1 ns, a time (
CLOCK
INPUT
OUTPUT
t
IS
1.4 V
t
t
LZ
IH
t
AC
V
2
C synchronous 2-wire bus).
1.4 V
IL
t
CL
= 0.4 V and
t
t
OH
CH
t
T
t
t
AC
HZ
t
T
2.4 V
0.4 V
– 1) ns has to be added to this parameter.
IO.vsd
2
V
PROM—is assembled onto the module. Information about the
IH
1.4 V
= 2.4 V with the timing referenced to the 1.4 V crossover
2
PROM device during module production using a Serial
11
t
T
/2 – 0.5) ns must be added to this parameter.
V
IH
and
t
AC
HYS 64/72V16300/32220GU
V
Measurement conditions for
I/O
IL
and
. All AC measurements assume
t
OH
t
AC
parameters are measured
and
SDRAM-Modules
t
50 pF
OH
t
RC
is satisfied
9.01