M28F101 STMicroelectronics, M28F101 Datasheet - Page 10

• Manufacturer Part Number: M28F101
• Description: 1 Mb 128K x 8/ Chip Erase FLASH MEMORY
• Manufacturer: STMicroelectronics

M28F101
Figure 7. Electronic Signature Command Waveforms
READ/WRITE MODES (cont’d)
As the Erase algorithm flow chart shows, when the
data read during Erase Verify is not FFh, another
Erase operation is performed and verification con-
tinues from the address of the last verifiedbyte. The
command is terminated by writing another valid
command to the command register (for example
Program or Reset).
Program and Program Verify Modes. The Pro-
gram Mode is set-up by writing 40h to the command
register. This is followed by a second write cycle
which latches the address and data of the byte to
be programmed. The rising edge of W during this
secind cycle starts the programming operation.
Programming is followed by a Program Verify of the
data written.
10/23
V PP
A0-A16
E
G
W
DQ0-DQ7
tGHWL
SIGNATURE SET-UP
tVPHEL
READ ELECTRONIC
tELWL
tWLWH
tDVWH
COMMAND
tWHEH
tWHDX
ProgramVerify Mode is set-up by writing C0h to the
command register. The rising edge of W during the
set-up of the Program Verify Mode stops the Pro-
gramming operation. The following read cycle, of
the address already latched during programming,
is made with an internally generated margin volt-
age applied,reading valid data indicates that all bits
have been programmed.
Reset Mode. This command is used to safely abort
Erase or Program Modes. The Reset Mode is
set-up and performed by writing FFh two times to
the command register. The command should be
followed by writing a valid command to the the
command register (for example Read).
tWHGL
tAVQV
tELQV
00000h-00001h
MANUFACTURER
OR DEVICE
READ
tGLQV
DATA OUT
tGHQZ
tEHQZ
AI00673
tAXQX