M28F101 STMicroelectronics, M28F101 Datasheet - Page 6

• Manufacturer Part Number: M28F101
• Description: 1 Mb 128K x 8/ Chip Erase FLASH MEMORY
• Manufacturer: STMicroelectronics

M28F101
Table 8. DC Characteristics
(T
Note: 1. Not 100% tested. Characterisation Data available.
6/23
Symbol
A
I
I
I
I
I
I
I
I
CC2
CC5
CC3
CC4
V
I
V
PP1
PP2
PP3
PP4
V
V
I
= 0 to 70 C, –40 to 85 C or –40 to 125 C; V
I
V
ID
V
V
I
I
I
V
CC1
LPP
I
CC
PPH
LKO
LO
PP
PPL
OH
LI
OL
IH
ID
IL
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Supply Current (Programming)
Supply Current (Program Verify)
Supply Current (Erase)
Supply Current (Erase Verify)
Program Leakage Current
Program Current (Read or
Standby)
Program Current (Programming)
Program Current (Program
Verify)
Program Current (Erase)
Program Current (Erase Verify)
Input Low Voltage
Input High Voltage TTL
Input High Voltage CMOS
Output Low Voltage
Output High Voltage CMOS
Output High Voltage TTL
Program Voltage (Read
Operations)
Program Voltage (Read/Write
Operations)
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply Voltage, Erase/Program
Lock-out
Parameter
V
V
PP
PP
V
V
= V
= V
PP
PP
I
I
During Programming
OL
OL
CC
During Erase Verify
PPH
E = V
= V
0V
= V
PPH
Test Condition
E = V
During Erasure
0V
= 5.8mA (grade 1)
= 2.1mA (grade 6)
I
I
I
= 5V
During Verify
OH
OH
OH
, During Programming
V
V
V
PPH
PPH
, During Erase Verify
A9 = V
PP
E = V
PP
PP
V
IL
= –100 A
= –2.5mA
= –2.5mA
V
CC
, f = 6MHz
, During Erase
OUT
, During Verify
IN
> V
V
V
10%)
IH
CC
CC
ID
0.2V
CC
V
V
CC
CC
0.85 V
0.7 V
–0.5
11.4
11.5
Min
4.1
2.4
2.5
2
0
CC
CC
V
V
CC
CC
Max
0.45
0.45
12.6
120
200
0.8
6.5
30
50
10
15
15
15
30
30
13
10
1
10
10
5
5
+ 0.5
+ 0.5
1
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
A
A
A
A