UPA2713GR NEC, UPA2713GR Datasheet

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UPA2713GR

Manufacturer Part Number
UPA2713GR
Description
SWITCHING N- AND P-CHANNEL POWER MOS FET
Manufacturer
NEC
Datasheet

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Part Number:
UPA2713GR
Manufacturer:
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Quantity:
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Part Number:
UPA2713GR-E1-AT
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Document No. G15981EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
DESCRIPTION
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
The PA2713GR is P-channel MOS Field Effect Transistor
Low on-state resistance
Low C
Small and surface mount package (Power SOP8)
R
R
R
DS(on)1
DS(on)2
DS(on)3
2. Mounted on ceramic substrate of 1200 mm
3. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
4. Starting T
PART NUMBER
iss
= 16 m
= 25 m
= 30 m
: C
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
PA2713GR
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 1600 pF TYP.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
ch
Note1
= 25°C, V
Note2
Note3
Note4
Note4
DS
GS
GS
GS
GS
= 0 V)
= 10 V, I
= 4.5 V, I
= 4.0 V, I
= 0 V)
DD
= 15 V, R
P-CHANNEL POWER MOS FET
1%
Power SOP8
D
PACKAGE
D
D
= 4.0 A)
= 4.0 A)
= 4.0 A)
A
= 25°C, All terminals are connected.)
G
DATA SHEET
= 25
I
I
D(pulse)
V
V
D(DC)
P
P
T
E
T
I
SWITCHING
DSS
GSS
AS
stg
AS
T1
T2
ch
2
, L = 100 H, V
x 2.2 mm
MOS FIELD EFFECT TRANSISTOR
55 to +150
m20
m32
150
6.4
m8
30
2
2
8
GS
= 20
PACKAGE DRAWING (Unit: mm)
8
1
5.37 MAX.
mJ
°C
°C
W
W
V
V
A
A
A
0.40
1.27
0 V
+0.10
–0.05
0.78 MAX.
PA2713GR
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
1, 2, 3
4
5, 6, 7, 8: Drain
0.5 ±0.2
6.0 ±0.3
4.4
: Source
: Gate
Source
Drain
Body
Diode
0.8
0.10
2002

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UPA2713GR Summary of contents

Page 1

... The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G15981EJ1V0DS00 (1st edition) ...

Page 2

... DSS Starting T TEST CIRCUIT 3 GATE CHARGE D.U. PG 25°C, All terminals are connected.) A TEST CONDITIONS DSS GSS GS(off ...

Page 3

... V - Drain to Source Voltage - V DS TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 10 1 0.1 0.01 100 25°C, All terminals are connected.) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 2.4 2 1.6 1.2 0.8 0.4 0 150 175 100 Single pulse Mounted on ceramic substrate of 1200 mm ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 40 Pulsed 4 4 0.2 - 0 Drain to Source Voltage - ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed 100 T - Channel Temperature - °C ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 6 Starting T = ...

Page 7

... NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others ...

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