AM29LV004B-1 AMD [Advanced Micro Devices], AM29LV004B-1 Datasheet

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AM29LV004B-1

Manufacturer Part Number
AM29LV004B-1
Description
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
Am29LV004B
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-
inally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 21522 Revision D
Amendment +1 Issue Date November 13, 2000

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AM29LV004B-1 Summary of contents

Page 1

... Am29LV004B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig- inally developed the specification, these products will be offered to customers of both AMD and Fujitsu ...

Page 2

... Am29LV004B 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29LV004 device High performance — Access times as fast ...

Page 3

... GENERAL DESCRIPTION The Am29LV004B Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device. This device is manufactured using AMD’ ...

Page 4

... Program and Erase Operation Status ...................................... 9 Standby Mode .......................................................................... 9 Automatic Sleep Mode ............................................................. 9 RESET#: Hardware Reset Pin ................................................. 9 Output Disable Mode ................................................................ 9 Table 2. Am29LV004BT Top Boot Block Sector Address Table..... 10 Table 3. Am29LV004BB Bottom Boot Block Sector Address Table 10 Autoselect Mode ..................................................................... 11 Table 4. Am29LV004B Autoselect Codes (High Voltage Method).. 11 Sector Protection/Unprotection ............................................... 11 Temporary Sector Unprotect ...

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... Register CE# OE# V Detector CC A0–A18 4 - Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29LV004B Am29LV004B -90 -120 90 120 90 120 35 50 – DQ0 DQ7 Input/Output Buffers Data STB Latch Y-Gating Cell Matrix ...

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... DQ7 6 DQ6 7 DQ5 8 DQ4 DQ3 13 DQ2 14 DQ1 15 DQ0 Standard TSOP Reverse TSOP Am29LV004B A17 A10 DQ7 35 DQ6 34 DQ5 33 DQ4 DQ3 27 DQ2 26 DQ1 25 DQ0 ...

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... Write enable RESET# = Hardware reset pin, active low RY/BY# = Ready/Busy# output V = 3.0 volt-only single power supply CC (see Product Selector Guide for speed options and voltage supply tolerances Device ground Pin not connected internally 6 LOGIC SYMBOL 19 A0–A18 CE# OE# WE# RESET# Am29LV004B 8 DQ0–DQ7 RY/BY# ...

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... E DEVICE NUMBER/DESCRIPTION Am29LV004B 4 Megabit (512 K x 8-Bit) CMOS Flash Memory 3.0 Volt-only Read, Program and Erase Valid Combinations AM29LV004BT-70, EC, EI, FC, FI AM29LV004BB-70 AM29LV004BT-90, AM29LV004BB-90 EC, EI, EE, FC, FI, FE AM29LV004BT-120, AM29LV004BB-120 C TEMPERATURE RANGE C = Commercial (0°C to +70° Industrial (– + Extended (– +125 C) ...

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... The command register itself does not occupy any addressable memory loca- tion. The register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. The contents of Table 1. Am29LV004B Device Bus Operations Operation Read Write Standby ...

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... Refer to the AC Characteristics tables for RESET# parameters and to Figure 14 for the timing diagram. Output Disable Mode When the OE# input ACC disabled. The output pins are placed in the high imped- ance state. Am29LV004B in the DC CC4 , the RP ±0.3 V, the device RESET# is held CC4 ± ...

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... Table 2. Am29LV004BT Top Boot Block Sector Address Table Sector A18 A17 A16 SA0 0 0 SA1 0 0 SA2 0 1 SA3 0 1 SA4 1 0 SA5 1 0 SA6 1 1 SA7 1 1 SA8 1 1 SA9 1 1 SA10 1 1 Table 3. Am29LV004BB Bottom Boot Block Sector Address Table ...

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... When using programming equipment, the autoselect mode requires V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Table 4. Am29LV004B Autoselect Codes (High Voltage Method) Description Manufacturer ID: AMD Device ID: Am29LV004BT (Top Boot Block) Device ID: Am29LV004BB ...

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... Reset PLSCNT = 1 Increment PLSCNT No Yes PLSCNT = 1000? Yes Device failed Sector Unprotect Algorithm Am29LV004B START PLSCNT = 1 RESET Wait First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes No All sectors protected? Yes ...

Page 14

... See also “Requirements for Reading Array Data” in the “Device Bus Operations” section for more information. The Read Operations table provides the read parame- ters, and Figure 13 shows the timing diagram. Am29LV004B Write Inhibit is less than V , the device does not LKO ...

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... The first cycle must contain the data 90h; the second cycle the data 00h. The device then returns to reading array data. Figure 3 illustrates the algorithm for the program oper- ation. See the Erase/Program Operations table in “AC Am29LV004B ...

Page 16

... Timer” section.) The time-out begins from the rising edge of the final WE# pulse in the command sequence. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. Note that a hardware reset during the Am29LV004B 15 ...

Page 17

... START Write Erase Command Sequence Data Poll from System No Data = FFh? Yes Erasure Completed Notes: 1. See Table 5 for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 4. Erase Operation Am29LV004B Embedded Erase algorithm in progress ...

Page 18

... Command Definitions Table 5. Am29LV004B Command Definitions Command Sequence (Note 1) Read (Note 5) Reset (Note 6) Manufacturer ID Device ID, Top Boot Block Auto- select Device ID, Bottom Boot Block 4 (Note 7) Sector Protect Verify (Note 8) Program Unlock Bypass Unlock Bypass Program (Note 9) Unlock Bypass Reset (Note 10) ...

Page 19

... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 5. Data# Polling Algorithm Am29LV004B Yes Yes PASS ...

Page 20

... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. Am29LV004B 19 ...

Page 21

... Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1” . See text. Figure 6. Toggle Bit Algorithm Am29LV004B (Note 1) No (Notes Program/Erase Operation Complete ...

Page 22

... DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. Table 6. Write Operation Status DQ7 DQ5 (Note 2) DQ6 (Note 1) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 Am29LV004B DQ2 DQ3 (Note 2) RY/BY# N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N ...

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... Operating ranges define those limits between which the func- tionality of the device is guaranteed. 22 +0.8 V –0.5 V –2 +0.5 V. During +2 +0.5 V 2.0 V Am29LV004B Figure 7. Maximum Negative Overshoot Waveform Figure 8. Maximum Positive Overshoot Waveform ...

Page 24

... 0 3 4.0 mA min I = –2 min I = –100 µ min . Typical CCmax Am29LV004B Min Typ Max Unit 1.0 µA 35 µA 1.0 µ 0.2 5 µA 0.2 5 µA 0.2 5 µA –0 ...

Page 25

... Note: Addresses are switching at 1 MHz Figure 9. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 Note 1500 2000 2500 Time Frequency in MHz Figure 10. Typical I vs. Frequency CC1 Am29LV004B 3000 3500 4000 3 ...

Page 26

... Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Measurement Level Am29LV004B -90, -70 -120 Unit 1 TTL gate L 30 100 0.0– ...

Page 27

... Test Setup Read Toggle and Data# Polling t RC Addresses Stable t ACC OEH t CE HIGH Z Figure 13. Read Operations Timings Am29LV004B Speed Option -70 -90 -120 Min 70 90 120 Max 70 90 120 Max 70 90 120 Max Max 25 30 ...

Page 28

... CE#, OE# RESET# RY/BY# CE#, OE# RESET# Test Setup Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 14. RESET# Timings Am29LV004B All Speed Options Max 20 Max 500 Min 500 Min 50 Min 20 Min Unit µ µ ...

Page 29

... See the “Erase and Programming Performance” section for more information. 28 Description Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min Min Min Am29LV004B Speed Options -70 -90 -120 Unit 70 90 120 ...

Page 30

... RY/BY VCS Note program address program data WPH A0h t BUSY is the true data at the program address. OUT Figure 15. Program Operation Timings Am29LV004B Read Status Data (last two cycles WHWH1 Status D OUT ...

Page 31

... Note sector address (for Sector Erase Valid Address for reading status data (see “Write Operation Status”). Figure 16. Chip/Sector Erase Operation Timings 555h for chip erase WPH t DH 30h 10 for Chip Erase t BUSY Am29LV004B Read Status Data WHWH2 In Complete Progress t RB ...

Page 32

... Figure 18. Toggle Bit Timings (During Embedded Algorithms Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29LV004B VA True Valid Data Valid Data True VA VA Valid Status Valid Data (stops toggling) High Z High Z 31 ...

Page 33

... Figure 20. Temporary Sector Unprotect Timing Diagram 32 Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 19. DQ2 vs. DQ6 Description Min Min Program or Erase Command Sequence t RSP Am29LV004B Erase Resume Erase Erase Complete Read All Speed Options 500 VIDR Unit ns µs ...

Page 34

... RESET# SA, A6, A1, A0 Sector Protect/Unprotect Data 60h 1 µs CE# WE# OE# * For sector protect For sector unprotect Figure 21. Sector Protect/Unprotect Timing Diagram Valid* 60h Sector Protect: 150 µs Sector Unprotect Am29LV004B Valid* Valid* Verify 40h Status 33 ...

Page 35

... Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. 34 Description Min Min Min Min Min Min Min Min Min Min Min Typ Typ Am29LV004B Speed Options -70 -90 -120 Unit 70 90 120 ...

Page 36

... PA for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29LV004B PA DQ7# D OUT is the data written OUT 35 ...

Page 37

... V, 1,000,000 cycles. CC –100 mA = 3.0 V, one pin at a time. CC Test Setup OUT V IN Test Conditions 150 C 125 C Am29LV004B Unit Comments s Excludes 00h programming prior to erasure (Note 4) s µs Excludes system level overhead (Note 1,000,000 cycles. Additionally, CC Min Max –1.0 V 12.5 V –1 ...

Page 38

... PHYSICAL DIMENSIONS* TS 040—40-Pin Standard TSOP * For reference only. BSC is an ANSI standard for Basic Space Centering. Am29LV004B Dwg rev AA; 10/99 37 ...

Page 39

... PHYSICAL DIMENSIONS* TSR040—40-Pin Reverse TSOP * For reference only. BSC is an ANSI standard for Basic Space Centering. 38 Am29LV004B Dwg rev AA; 10/99 ...

Page 40

... Operations Timing and Figure 16. Chip/Sector Erase Operations Deleted t and changed OE# waveform to start at GHWL high. Physical Dimensions Replaced figures with more detailed illustrations. Revision D+1 (November 13, 2000) Global Added table of contents. Deleted burn-in option from Ordering Information section. Am29LV004B : Added Note 2 “Maximum = V ”. CC CCmax 39 ...

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