AM29LV004B-1 AMD [Advanced Micro Devices], AM29LV004B-1 Datasheet - Page 9

• Manufacturer Part Number: AM29LV004B-1
• Description: 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
Legend:
L = Logic Low = V
Notes:
1. Addresses are A18–A0.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
control and selects the device. OE# is the output
control and gates array data to the output pins. WE#
should remain at V
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No
command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert
valid addresses on the device address inputs produce
valid data on the device data outputs. The device
remains enabled for read access until the command
register contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica-
tions and to Figure 13 for the timing diagram. I
DC Characteristics table represents the active current
specification for reading array data.
8
Read
Output Disable
Reset
Sector Protect (Note 2)
Write
Standby
Sector Unprotect (Note 2)
Temporary Sector Unprotect
Protection/Unprotection” section.
Operation
IL
, H = Logic High = V
IH
.
Table 1. Am29LV004B Device Bus Operations
V
CC
IL
. CE# is the power
IH
CE#
X
X
L
L
L
L
L
, V
0.3 V
ID
= 12.0 0.5 V, X = Don’t Care, A
CC1
OE#
H
H
H
H
X
X
X
L
in the
Am29LV004B
WE#
H
X
H
X
L
L
L
X
the register serve as inputs to the internal state
machine. The state machine outputs dictate the func-
tion of the device. Table 1 lists the device bus
operations, the inputs and control levels they require,
and the resulting output. The following subsections
describe each of these operations in further detail.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V
The device features an Unlock Bypass mode to facili-
tate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are
required to program a byte, instead of four. The “Byte
Program Command Sequence” section has details on
programming data to the device using both standard
and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Tables 2 and 3 indicate the
address space that each sector occupies. A “sector
address” consists of the address bits required to
uniquely select a sector. The “Command Definitions”
section has details on erasing a sector or the entire
chip, or suspending/resuming the erase operation.
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the
V
RESET#
CC
V
V
V
H
H
H
L
ID
ID
ID
0.3 V
IL
, and OE# to V
IN
= Address In, D
Sector Address, A6 = H,
Sector Address, A6 = L,
Addresses (Note 1)
A1 = H, A0 = L
A1 = H, A0 = L
IH
A
A
A
X
X
X
IN
IN
IN
.
IN
= Data In, D
OUT
DQ0–DQ7
D
D
IN
IN
High-Z
High-Z
High-Z
D
= Data Out
D
, D
, D
D
OUT
IN
IN
OUT
OUT