AM29LV160M AMD [Advanced Micro Devices], AM29LV160M Datasheet

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AM29LV160M

Manufacturer Part Number
AM29LV160M
Description
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet

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Am29LV160M
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not available for designs. For new and current designs,
S29GL016A supersedes Am29LV160M and is the factory-recommended migration path. Please refer
to the S29GL016A datasheet for specifications and ordering information. Availability of this docu-
ment is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 25974 Revision B
Amendment 5 Issue Date January 31, 2007

Related parts for AM29LV160M

AM29LV160M Summary of contents

Page 1

... Data Sheet This product has been retired and is not available for designs. For new and current designs, S29GL016A supersedes Am29LV160M and is the factory-recommended migration path. Please refer to the S29GL016A datasheet for specifications and ordering information. Availability of this docu- ment is retained for reference and historical purposes only. ...

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THIS PAGE LEFT INTENTIONALLY BLANK. ...

Page 3

... Volt-only Boot Sector Flash Memory This product has been retired and is not available for designs. For new and current designs, S29GL016A supersedes Am29LV160M and is the factory-recom- mended migration path. Please refer to the S29GL016A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only ...

Page 4

... General Description The Am29LV160M Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The de- vice requires only a single 3 ...

Page 5

... Program and Erase Operation Status ...............................................11 Standby Mode ...........................................................................................11 Automatic Sleep Mode .........................................................................12 RESET#: Hardware Reset Pin .............................................................12 Output Disable Mode ...........................................................................12 Table 2. Sector Address Tables (Am29LV160MT) ...................13 Table 3. Sector Address Tables (Am29LV160MB) ...................14 Autoselect Mode ....................................................................................15 Table 4. Autoselect Codes (High Voltage Method) ..................15 Sector Protection/Unprotection .......................................................15 Temporary Sector Unprotect ............................................................16 Figure 1. Temporary Sector Unprotect Operation................... 16 Figure 2 ...

Page 6

... 3.0–3 (Note 2) = 2.7–3 for full specifications. Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29LV160M Am29LV160M 70R 85 (Note 2) 90 100 100 100 DQ15–DQ0 (A-1) Input/Output ...

Page 7

... CC 13 DQ11 14 DQ3 15 DQ10 16 DQ2 17 DQ9 18 DQ1 19 DQ8 20 DQ0 January 31, 2007 25974B5 Standard TSOP Reverse TSOP Am29LV160M 48 A16 47 BYTE DQ15/A-1 44 DQ7 43 DQ14 42 DQ6 41 DQ13 40 DQ5 39 DQ12 38 DQ4 DQ11 35 DQ3 ...

Page 8

... A11 DQ7 DQ14 A19 DQ5 DQ12 A18 NC DQ2 DQ10 DQ0 DQ8 CE# Am29LV160M DQ13 DQ6 DQ4 DQ11 DQ3 G2 H2 DQ9 DQ1 25974B5 January 31, 2007 ...

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... D6 E6 A10 A11 DQ7 A19 DQ5 A18 NC DQ2 DQ0 Am29LV160M BYTE# DQ15/A DQ14 DQ13 DQ6 DQ12 V DQ4 DQ10 DQ11 DQ3 ...

Page 10

... Output enable = Write enable = Hardware reset pin = Ready/Busy output = 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) = Device ground = Pin not connected internally 20 A19–A0 DQ15–DQ0 (A-1) CE# OE# WE# RESET# BYTE# RY/BY# Am29LV160M 25974B5 January 31, 2007 ...

Page 11

... Access V Valid Combinations for FBGA Packages CC Time Voltage (ns) Range Order Number 90 2.7–3.6 V Am29LV160MT90, Am29LV160MB90 100 Am29LV160MT100, Am29LV160MB100 Note: For 70R and 85 speed options shown in product selector guide, contact a sales office or representative for availability and ordering information. Valid Combinations Am29LV160M Access V CC ...

Page 12

... The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. trol levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Table 1. Am29LV160M Device Bus Operations Operation CE# OE# WE# RESET# Read ...

Page 13

... Table 3, on page 14 indicate the address space that each “Command Definitions” on page 23 “AC Characteristics” on page 42 “Write Operation Status” on page 33 “AC Characteristics” on page 42 Am29LV160M Figure 13, on page rep- “Word/Byte Program contains “Autoselect Mode” on for more information. ...

Page 14

... V, the standby current is greater. SS READY after the RESET# pin returns for RESET# parameters and to for the timing diagram. , output from the device is disabled. The output pins IH Am29LV160M ± 0.3 V, the device CC represents the standby CC4 + ACC for at least a period ...

Page 15

... Table 2. Sector Address Tables (Am29LV160MT) Sector A19 A18 A17 A16 A15 A14 A13 A12 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 ...

Page 16

... Table 3. Sector Address Tables (Am29LV160MB) Sector A19 A18 A17 A16 A15 A14 A13 A12 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 ...

Page 17

... Sector Address Don’t care. IH Am29LV160M (11 Table 2, on page 13 Table 10, on page 31 and . See “Command Defini DQ8 DQ7 DQ15 DQ0 01h (AMD) ...

Page 18

... During this mode, formerly protected sectors can be pro- Figure 22, on page 49 START RESET (Note 1) Perform Erase or Program Operations RESET Temporary Sector Unprotect Completed (Note 2) Am29LV160M “Au- Figure 2, on shows the timing dia- is removed from ID Figure shows the timing 25974B5 January 31, 2007 ...

Page 19

... Reset PLSCNT = 1 Increment PLSCNT No Yes PLSCNT = 1000? Yes Device failed In-System Single High Voltage Sector Unprotect Algorithm Am29LV160M START PLSCNT = 1 RESET Wait First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes No All sectors protected? Yes ...

Page 20

... Customer ESN Factory Lockable Locked x8 1F0000h– ESN 1F000Fh Determined by customer 1F0010h– Unavailable 1F00FFh “Command Definitions” on page Am29LV160M ExpressFlash Factory Locked ESN or determined by customer Determined by customer 23. 25974B5 January 31, 2007 ...

Page 21

... Write 60h to any address Remove from RESET# Write 40h to SecSi Sector address Write reset with command SecSi Sector Read from SecSi Protect Verify Sector address complete with Am29LV160M This ...

Page 22

... Primary OEM Command Set 0000h 0040h Address for Primary Extended Table 0000h 0000h Alternate OEM Command Set (00h = none exists) 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) 0000h Am29LV160M 22. In word to Table 9, on page 22. Description 25974B5 January 31, 2007 ...

Page 23

... Erase Block Region 2 Information 0020h 0000h 0000h 0000h Erase Block Region 3 Information 0080h 0000h 001Eh 0000h Erase Block Region 4 Information 0000h 0001h Am29LV160M Description pin present) PP pin present) PP µs N µs (00h = not supported (00h = not supported) N times typical ...

Page 24

... In addition, the following , the device does not accept any write cycles. This pro- LKO power-up and power-down. The command register and all CC is greater than V . The system must provide the CC LKO . Am29LV160M Description Table 10, on page 25974B5 January 31, 2007 ...

Page 25

... OE during power up, the device does not accept IL IH Table 10, on page 31 “AC Characteristics” on page “Erase Suspend/Erase Resume Commands” on page 27 provides the read parameters, and shows the timing diagram. Am29LV160M , CE WE and Table 11, on 42. “Reset Com- ...

Page 26

... and Table 11, on page 32 show the address and data re- for valid sector addresses. and Table 11, on page 32 show the address and data re- for information on these status bits. Am29LV160M Table 4, on page 15, on address bit A9. ID Table 2, on 25974B5 January 31, 2007 ...

Page 27

... The device then returns to reading array data. Figure 4, on page 26 table “Erase/Program Operations” on page 45 page 46 for timing diagrams. January 31, 2007 25974B5 and Table 11, on page 32 illustrates the algorithm for the program operation. See the for parameters, and Am29LV160M show the Figure 17 ...

Page 28

... Write Program Command Sequence Data Poll from System Embedded Program algorithm in progress Verify Data? Yes No Last Address? Yes Programming Completed Figure 4. Program Operation Table 10, on page 31 and “Autoselect Command Sequence” on page 24 Am29LV160M No Table 11, on page 32 for informa- 25974B5 January 31, 2007 ...

Page 29

... See the for parameters, and Table 10, on page 31 38.) The time-out begins from the rising for information on these status bits.) illustrates the algorithm for the erase operation. Refer to the for parameters, and Am29LV160M Figure 18, on and Table 11, on Figure 18 ...

Page 30

... In most systems rapid erase/suspend activity occurs only briefly. In such cases, erase performance is not significantly impacted for information on these status bits. “Write Operation Status” on page 33 “Autoselect Com- for more information. Am29LV160M for 25974B5 January 31, 2007 ...

Page 31

... The system can determine the status of the program operation using the January 31, 2007 25974B5 START Write Erase Command Sequence Data Poll from System Embedded Erase algorithm in progress No Data = FFh? Yes Erasure Completed and Table 11, on page 32 for erase command sequence. for more information. Figure 5. Erase Operation Am29LV160M 29 ...

Page 32

... Autoselect and SecSi Sector Read data as read operations are also allowed required Data cannot be read from erase- or program-suspended sectors Done reading? Yes Write Program Resume Write address/data Command Sequence XXXh/30h Device reverts to operation prior to Program Suspend Am29LV160M “Write 25974B5 January 31, 2007 ...

Page 33

... Erase Resume command is valid only during Erase Suspend mode. 14. Command is valid when device is ready to read array data or when device is in autoselect mode. 15. Data is 83h for factory locked and 03h for not factory for more locked. Am29LV160M ) IH Fourth Fifth Sixth Addr Data ...

Page 34

... Erase Resume command is valid only during Erase Suspend mode. 14. Command is valid when device is ready to read array data or when device is in autoselect mode. 15. Data is 83h for factory locked and 03h for not factory for more locked. Am29LV160M ) IL Fourth Fifth Sixth Addr Data ...

Page 35

... Data# Polling algorithm. January 31, 2007 25974B5 Table 12, on page shows the outputs for Data# Polling on DQ7. Am29LV160M and the following Figure ...

Page 36

... RY/BY# pins can be tied together in parallel with a pull-up resistor START Read DQ7–DQ0 Addr = VA Yes DQ7 = Data? No DQ5 = 1? Yes Read DQ7–DQ0 Addr = VA Yes DQ7 = Data? No PASS FAIL Figure 7. Data# Polling Algorithm . CC Am29LV160M 25974B5 January 31, 2007 ...

Page 37

... Figure 17, on page 46 and Figure 18, on page 47 shows the outputs for Toggle Bit I on DQ6. explains the algorithm. section shows the toggle bit timing diagrams. “DQ2: Toggle Bit II”. Am29LV160M 42, Fig- show RY/ “DQ7: Data# Polling”). Figure 8, on page “Reading Figure 20, on page 48 ...

Page 38

... DQ2 and DQ6. shows the toggle bit algorithm in flowchart form, and the explains the algorithm. See also the Figure 21, on page 49 shows the differences between DQ2 for the following discussion. Whenever the system Am29LV160M shows the tog- Figure 25974B5 January 31, 2007 ...

Page 39

... START Read DQ7–DQ0 (Note 1) Read DQ7–DQ0 No Toggle Bit = Toggle? Yes No DQ5 = 1? Yes (Notes Read DQ7–DQ0 1, 2) Twice Toggle Bit No = Toggle? Yes Program/Erase Operation Not Program/Erase Complete, Write Operation Complete Reset Command Figure 8. Toggle Bit Algorithm Am29LV160M 37 ...

Page 40

... Table 12. Write Operation Status DQ7 (Note DQ5 2) DQ6 (Note 1) DQ7# Toggle 0 Toggle Invalid (not allowed toggle Data Data Data DQ7# Toggle for more information. Am29LV160M “Sector Erase shows the outputs for DQ2 DQ3 (Note 2) RY/BY# 0 N/A No toggle 0 1 Toggle Data 0 N/A Toggle Data Data 0 ...

Page 41

... V for periods ns. See SS V +0.5 V. During voltage CC +2.0 V for periods ns Maximum DC input voltage on pin A9 is +12.5 V which +2 +0.5 V 2.0 V Figure 10. Maximum Positive ) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C A Am29LV160M +0 Figure to –2.0 V for periods Overshoot Waveform 39 ...

Page 42

... V = 3 4.0 mA min I = -2 min I = -100 µ –0 min CC 2.3 . Typical max Am29LV160M Typ Max Unit ±1.0 µA 35 µA 35 µA ±1.0 µ 0.4 5 µA 0.8 5 µA 0.4 5 µA 0 ...

Page 43

... Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Measurement Level Am29LV160M 70R, 85 90, 100 Unit 1 TTL gate 0.0– ...

Page 44

... Read Toggle and Data# Polling for test specifications Addresses Stable t ACC OEH t CE HIGH Z Figure 13. Read Operations Timings Am29LV160M Speed Options 70R 85 90 100 Min 100 Max 100 Max 100 Max 30 35 ...

Page 45

... January 31, 2007 25974B5 Test Setup Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 14. RESET# Timings Am29LV160M All Speed Options Unit Max 20 µs Max 500 ns Min 500 ns Min 50 ns Min 20 µ ...

Page 46

... Address DQ15 Input Output t FHQV The falling edge of the last WE# signal t SET ( HOLD AH for t and t specifications Am29LV160M Speed Options 70R 85 90 100 Unit 100 ns Data Output (DQ0–DQ7) Address Input Data Output (DQ0– ...

Page 47

... Min Min Min Min Min Min Min Min Min Min Min Byte Typ Word Typ Typ Min Min Max Max section for more information. Am29LV160M Speed Options 70R 85 90 100 Unit 100 ...

Page 48

... POLL WPH A0h t BUSY is the true data at the program address. OUT Figure 17. Program Operation Timings Am29LV160M Read Status Data (last two cycles WHWH1 D Status OUT t RB 25974B5 January 31, 2007 ...

Page 49

... Illustration shows device in word mode. Figure 18. Chip/Sector Erase Operation Timings January 31, 2007 25974B5 555h for chip erase WPH 55h 30h 10 for Chip Erase t Am29LV160M Read Status Data WHWH2 In Complete Progress t BUSY RB 47 ...

Page 50

... Figure 19. Data# Polling Timings (During Embedded Algorithms Valid Status Valid Status (first read) (second read) Figure 20. Toggle Bit Timings (During Embedded Algorithms) Am29LV160M VA High Z Valid Data True High Z True Valid Data VA VA Valid Status Valid Data (stops toggling) 25974B5 January 31, 2007 ...

Page 51

... Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 21. DQ2 vs. DQ6 for Erase and Erase Suspend Operations Min Min Program or Erase Command Sequence t RSP Am29LV160M Erase Resume Erase Erase Complete Read All Speed Options Unit 500 4 t VIDR ns µs ...

Page 52

... Note: For sector protect For sector unprotect Figure 23. Sector Protect/Unprotect Timing Diagram Valid* Valid* 60h Sector Protect: 150 µs Sector Unprotect Am29LV160M Valid* Verify 40h Status 25974B5 January 31, 2007 ...

Page 53

... Sector Erase Operation (Note 2) WHWH2 WHWH2 Notes: 1. Not 100% tested. 2. See “Erase and Programming Performance” on page 59 January 31, 2007 25974B5 Byte Word for more information. Am29LV160M Speed Options 70R 85 90 100 Min 100 Min 0 Min 45 ...

Page 54

... SA for sector erase 555 for chip erase Data# Polling POLL t GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29LV160M PA DQ7#, D OUT DQ15 = data written to OUT 25974B5 January 31, 2007 ...

Page 55

... V, one pin at a time. CC Test Setup OUT Test Conditions 150°C 125°C Am29LV160M Unit Comments Excludes 00h programming prior to sec erasure (Note 4) µs Excludes system level overhead (Note 5) sec = 3.0V, 100,000 cycles. Additionally, Min Max –1.0 V 12.5 V –1 ...

Page 56

... Physical Dimensions TS 048—48-Pin Standard TSOP Note: BSC is an ANSI standard for Basic Space Centering Dwg rev AA; 10/99 Am29LV160M 25974B5 January 31, 2007 ...

Page 57

... Physical Dimensions TSR048—48-Pin Reverse TSOP Note: BSC is an ANSI standard for Basic Space Centering. January 31, 2007 25974B5 Am29LV160M Dwg rev AA; 10/99 55 ...

Page 58

... Physical Dimensions FBA048—48-Ball Fine-Pitch Ball Grid Array (BGA Package Note: BSC is an ANSI standard for Basic Space Centering Am29LV160M Dwg rev AF; 10/99 25974B5 January 31, 2007 ...

Page 59

... Physical Dimensions LAA064—64-Ball Fortified Ball Grid Array (BGA Package Note: BSC is an ANSI standard for Basic Space Centering. January 31, 2007 25974B5 Am29LV160M 57 ...

Page 60

... Added Secured Silicon Sector Factory Protect command sequence. Table 10. Write Operation Status Added Program Suspend Mode rows to table. BGA and TSOP Capacitance Added fine-pitch BGA capacitance to table. AC Characteristics tables Typical sector erase time is now 0 all tables Am29LV160M 25974B5 January 31, 2007 ...

Page 61

... Physical Dimensions Corrected Fortified BGA drawing to FBA048. Revision A+3 (January 6, 2003) Global Deleted references to WP# and ACC. The Am29LV160M does not offer those features. Command Definitions table Deleted references to write buffers. This device does not offer that feature. AC Characteristics Erase and Program Operations table; Alternate CE# Controlled Erase/Operations ...

Page 62

... Revision B+4 (January 10, 2006) This product has been retired and is not available for designs. For new and cur- rent designs, S29GL016A supersedes Am29LV160M and is the factory- recommended migration path. Please refer to the S29GL016A datasheet for spec- ifications and ordering information. Availability of this document is retained for reference and historical purposes only ...

Page 63

... Copyright © 2002–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Ad- vanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. January 31, 2007 25974B5 Am29LV160M 61 ...

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