AM29LV160M AMD [Advanced Micro Devices], AM29LV160M Datasheet - Page 55

• Manufacturer Part Number: AM29LV160M
• Description: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
Latchup Characteristics
Note: Includes all pins except V
TSOP Pin and BGA Package Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
Data Retention
January 31, 2007 25974B5
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
Table 10, on page 31
Parameter Symbol
Current
C
C
C
OUT
IN2
IN
Parameter
Minimum Pattern Data Retention Time
A
= 25°C, f = 1.0 MHz.
and
Parameter
SS
SS
Description
Table 11, on page 32
Word Mode
Byte Mode
on all pins except I/O pins
on all I/O pins
CC
Parameter Description
Control Pin Capacitance
. Test conditions: V
Output Capacitance
Input Capacitance
D a t a
CC
Typ (Note 1)
= 2.7 V, 100,000 cycles.
0.7
32
18
18
36
19
for further information on command definitions.
CC
S h e e t
= 3.0 V, one pin at a time.
Am29LV160M
Max (Note 2)
V
300
300
100
15
66
V
V
OUT
IN
IN
Test Conditions
= 0
= 0
= 0
°
C, V
Test Setup
150°C
125°C
CC
= 3.0V, 100,000 cycles. Additionally,
–100 mA
–1.0 V
–1.0 V
Fine-pitch BGA
Fine-pitch BGA
Fine-pitch BGA
Min
Unit
sec
sec
µs
TSOP
TSOP
TSOP
Excludes 00h programming prior to
Min
10
20
Excludes system level overhead
Typ
4.2
8.5
5.4
7.5
3.9
6
erasure (Note 4)
Comments
(Note 5)
V
CC
+100 mA
Max
5.0
6.5
4.7
7.5
12.5 V
12
9
Max
+ 1.0 V
Years
Years
Unit
Unit
pF
pF
pF
pF
pF
pF
53