AM29LV320MB SPANSION [SPANSION], AM29LV320MB Datasheet - Page 56

• Manufacturer Part Number: AM29LV320MB
• Manufacturer: SPANSION [SPANSION]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Maximum values are measured at V
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Tables 12 and
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
54
Parameter
Sector Erase Time
Chip Erase Time
Single Word/Byte Program Time
Accelerated Single Word/Byte Program Time
Total Write Buffer Program Time
Effective Write Buffer Program Time
Total Accelerated Write Buffer Program Time
(Note 5)
Chip Program Time
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Effective Accelerated Write Buffer Program Time
CC
all bits are programmed to 00h.
program/erase cycles.
13 for further information on command definitions.
Current
SS
SS
Description
(Note 3)
(Note 4)
on all pins except I/O pins
on all I/O pins
CC
(Note 5)
. Test conditions: V
CC
(Note 4)
(Note 3)
= 3.0, worst case temperature. Maximum values are valid up to and including 100,000
Per Word
Per Word
Per Byte
Per Byte
D A T A
CC
Am29LV320MT/B
= 3.0 V, one pin at a time.
Typ
S H E E T
6.25
12.5
31.5
(Note 1)
240
200
0.5
7.5
32
60
54
15
Max
1200
1040
600
540
(Note 2)
3.5
64
38
75
33
65
73
–100 mA
–1.0 V
–1.0 V
Min
CC
, Programming specification assume that
Unit
sec
sec
sec
µs
µs
µs
µs
µs
µs
µs
µs
26518C3 January 31, 2007
Excludes 00h programming
prior to erasure
Excludes system level
overhead
V
Comments
+100 mA
CC
12.5 V
Max
+ 1.0 V
(Note 7)
(Note 6)