SI4936DY-T1-E3 Vishay Semiconductors, SI4936DY-T1-E3 Datasheet

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SI4936DY-T1-E3

Manufacturer Part Number
SI4936DY-T1-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SI4936DY-T1-E3

Case
SOP8
Date_code
09+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4936DY-T1-E3
Manufacturer:
VISHAY
Quantity:
5 688
Part Number:
SI4936DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
For SPICE model information via the Worldwide Web: http://www.Siliconix.com/www/product/spice.htm
Document Number: 70150
S-50695—Rev. E, 18-Apr-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t v 10 sec.
Ordering Information: Si4936DY-T1
DS
30
30
(V)
G
G
S
S
1
1
2
2
Si4936DY-T1—E3 (Lead (Pb)-Free)
J
J
a
a
1
2
3
4
0.055 @ V
0.037 @ V
= 150_C)
= 150_C)
a
r
DS(on)
Top View
Dual N-Channel 30-V (D-S) MOSFET
SO-8
Parameter
Parameter
a
a
GS
GS
(W)
= 4.5 V
= 10 V
a
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
5.8
4.7
(A)
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
G
1
N-Channel MOSFET
Symbol
Symbol
FEATURES
D TrenchFETr Power MOSFET
D Lead (Pb)-Free Version is RoHS
D
S
T
R
1
J
1
V
V
I
P
P
, T
thJA
DM
I
I
I
GS
DS
D
D
S
Compliant
D
D
stg
G
2
N-Channel MOSFET
−55 to 150
D
S
Limit
Limit
Vishay Siliconix
2
2
"20
62.5
5.8
4.6
1.7
1.3
30
30
2
Si4936DY
www.vishay.com
Available
Unit
Unit
_C/W
_C
W
W
V
V
A
A
1

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