MRF21085 Freescale Semiconductor, Inc, MRF21085 Datasheet

MRF21085

Manufacturer Part Number

MRF21085

Description

Manufacturer

Freescale Semiconductor, Inc

Datasheets

1.MRF21085.pdf (12 pages)

2.MRF21085.pdf (12 pages)

Specifications of MRF21085

Date_code

06+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF21085

Manufacturer:

MOT

Quantity:

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Company:

Meier Automation Equipment Co., Limited

Part Number:

MRF21085

Manufacturer:

MOTOROLA/摩托罗拉

Quantity:

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF21085L3

Manufacturer:

FREESCALE

Quantity:

715

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

applications.

• Typical 2 - Carrier W - CDMA Performance: V

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Table 3. ESD Protection Characteristics

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Human Body Model

Machine Model

Designed for W- CDMA base station applications with frequencies from 2110

MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Output Power

40μ″ Nominal.

Derate above 25°C

out

Power Gain — 13.6 dB

Drain Efficiency — 23%

IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth

= 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84

= 25°C

Test Conditions

Characteristic

Rating

= 28 Volts, I

= 1000 mA,

Symbol

DSS

θJC

stg

CASE 465 - 06, STYLE 1

MRF21085LSR3

CASE 465A - 06, STYLE 1

Document Number: MRF21085

2110 - 2170 MHz, 90 W, 28 V

MRF21085LR3

LATERAL N - CHANNEL

MRF21085LR3 MRF21085LSR3

RF POWER MOSFETs

NI - 780

MRF21085LSR3

M3 (Minimum)

1 (Minimum)

- 65 to +150

NI - 780S

- 0.5, +65

- 0.5, +15

Value

Class

1.28

0.78

224

150

200

Rev. 9, 5/2006

W/°C

°C/W

Unit

Vdc

°C

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