MRF21085 Freescale Semiconductor, Inc, MRF21085 Datasheet

MRF21085

Manufacturer Part Number

MRF21085

Description

Manufacturer

Freescale Semiconductor, Inc

Datasheets

1.MRF21085.pdf (12 pages)

2.MRF21085.pdf (12 pages)

Specifications of MRF21085

Date_code

06+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF21085

Manufacturer:

MOT

Quantity:

155

Company:

Meier Automation Equipment Co., Limited

Part Number:

MRF21085

Manufacturer:

MOTOROLA/摩托罗拉

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF21085L3

Manufacturer:

FREESCALE

Quantity:

715

Current page: 1 of 12
Download datasheet (558Kb)



MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

applications.

• Typical 2 - carrier W - CDMA Performance for V

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ESD PROTECTION CHARACTERISTICS

REV 6

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .

Motorola, Inc. 2004

MOTOROLA RF DEVICE DATA

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Human Body Model

Machine Model

Designed for W- CDMA base station applications with frequencies from 2110

3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1

and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW

@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability

on CCDF.

Output Power

Derate above 25°C

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Output Power — 19 Watts Avg.

Power Gain — 13.6 dB

Efficiency — 23%

IM3 — - 37.5 dBc

ACPR — - 41 dBc

µ″ Nominal.

= 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =

= 25°C

Test Conditions

Freescale Semiconductor, Inc.

Characteristic

For More Information On This Product,

Rating

Go to: www.freescale.com

= 28 Volts,

5 MHz

MRF21085R3 MRF21085SR3 MRF21085LSR3

Symbol

DSS

θJC

stg

MRF21085LSR3

CASE 465 - 06, STYLE 1

MRF21085SR3, MRF21085LSR3

MRF21085SR3

MRF21085R3

CASE 465A - 06, STYLE 1

MRF21085R3

LATERAL N - CHANNEL

RF POWER MOSFETs

2170 MHz, 90 W, 28 V

NI - 780

M3 (Minimum)

1 (Minimum)

- 65 to +150

NI - 780S

Value (1)

- 0.5, +15

Class

Value

1.28

0.78

224

200

Order this document

by MRF21085/D

Watts

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF21085

Related keywords

MRF21085 datasheet
MRF21085 data sheet
MRF21085 pdf datasheet
MRF21085 component
MRF21085 part
MRF21085 distributor
MRF21085 RoHS
MRF21085 datasheet download