AM29PDL640AGA85NS SPANSION [SPANSION], AM29PDL640AGA85NS Datasheet - Page 44

• Manufacturer Part Number: AM29PDL640AGA85NS
• Description: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
• Manufacturer: SPANSION [SPANSION]

pSRAM DC AND OPERATING CHARACTERISTICS (NOTE 1)
Notes:
1. Overshoot: VCC + 2.0 V in case of pulse width ≤ 20 ns.
2. Undershoot: -2.0 V in case of pulse width ≤ 20 ns.
3. Not 100% Tested
4. For Si-7 pSRAM, Deep Power-down Standby is not available.
42
Parameter
Symbol
I
I
CC1
CC2
V
I
V
I
V
I
V
I
SBD
SB1
I
LO
SB
OH
LI
OL
IH
IL
s
s
Input Leakage Current
Output Leakage Current
Operating Current at Minimum
Cycle Time
Operating Current at Maximum
Cycle Time
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Standby Current (TTL)
Standby Current (CMOS)
Deep Power Down (Note 4)
Parameter Description
P R E L I M I N A R Y
V
CE#1s = V
V
Cycle time = Min., 100% duty
I
CE2
or V
Cycle time = 1 µ s, 100% duty
I
CE2 = V
I
I
CE#1s = V
inputs = V
CE1# = V
CE2 = V
Other inputs = V
CE2 ≤ 0.2 V,
Other Inputs = V
IO
IO
OL
OH
Am49PDL640AG
IN
IH
= 0 mA, CE#1
= 0 mA, CE#1 = V
= 2.1 mA
= –1.0 mA
= V
or WE# = V
IN
≥
≥
SS
V
V
Test Conditions
IH
DD
DD
DD
to V
DD
, V
IH
IH
IH
-0.2 V,
-0.2 V, V
, CE2s = V
or V
, CE2 = V
-0.2 V and
-0.2 V
IN
CC
= V
IL
SS
IL
SS
, V
≤
IH
~ V
~ V
IO
0.2 V,
IN
or V
= V
IL
IL
≤
,
CC
CC
IL
, Other
0.2 V
SS
or OE# =
IL
to V
CC
(Note 2)
–1.0
–1.0
–0.2
Min
2.2
2.4
Typ
November 20, 2003
V
(Note 1)
CC
Max
100
1.0
1.0
0.6
0.4
0.3
30
10
3
+0.2
Unit
mA
µA
µA
µA
µA
V
V
V
V