AGR09085E TRIQUINT [TriQuint Semiconductor], AGR09085E Datasheet - Page 2

• Manufacturer Part Number: AGR09085E
• Description: 85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
• Manufacturer: TRIQUINT [TriQuint Semiconductor]

85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
Table 4. dc Characteristics
Table 5. RF Characteristics
Drain-source Breakdown Voltage (V
Gate-source Leakage Current (V
Zero Gate Voltage Drain Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Gate Quiescent Voltage (V
Drain-source On-voltage (V
Output Capacitance
Reverse Transfer Capacitance
Linear Power Gain
Output Power
Drain Efficiency
Third-order Intermodulation Distortion
Input VSWR
Ruggedness
(V
(V
(V
(V
(V
(100 kHz spacing, V
(V
VSWR = 10:1, all angles)
DS
DS
DS
DS
DS
DS
= 28 Vdc, V
= 28 Vdc, V
= 28 V, P
= 28 V, 1 dB compression, I
= 28 V, P
= 28 V, P
OUT
OUT
OUT
GS
GS
= 8 W, I
= P
= 85 W, I
DS
= 0, f = 1 MHz)
= 0, f = 1 MHz)
1dB
= 28 V, P
Functional Tests (in Agere Systems Supplied Test Fixture)
DS
DS
, I
GS
DQ
Parameter
Parameter
DQ
DQ
= 10 V, I
= 28 V, I
DS
= 10 V, I
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
= 800 mA)
= 800 mA)
= 800 mA, f = 880 MHz,
GS
= 10 V, I
OUT
DQ
GS
= 5 V, V
= 800 mA)
D
DQ
= 90 WPEP, I
D
= 0, I
= 400 µA)
= 1 A)
= 800 mA)
D
= 1 A)
DS
Dynamic Characteristics
D
(in Supplied Test Fixture)
DS
= 200 µA)
Off Characteristics
= 0 V)
On Characteristics
= 28 V, V
300
DQ
= 800 mA)
GS
= 0 V)
V
Symbol
V
V
Symbol
C
V
VSWR
(BR)DSS
DS(ON)
C
C
GS(TH)
I
I
P
G
= 30 °C.
GS(Q)
IM3
GSS
DSS
G
—
OSS
RSS
1dB
FS
L
I
No degradation in output
power.
Min
Min
65
—
—
—
—
—
—
17
85
—
—
—
—
—
0.12
Typ
Typ
105
3.6
2.3
2:1
—
—
—
—
48
18
55
30
6
Max
Max
100
2.6
4.8
—
—
—
—
—
—
—
—
—
—
—
8
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
Vdc
Unit
dBc
dB
pF
pF
W
—
S
%