AGR18060E TRIQUINT [TriQuint Semiconductor], AGR18060E Datasheet - Page 4

• Manufacturer Part Number: AGR18060E
• Description: 60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor
• Manufacturer: TRIQUINT [TriQuint Semiconductor]

60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Typical Performance Characteristics
Note:
Z
0
= 10 Ω
M
1
1842.5 (f2)
1
Z
L
8
8
H
was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
0
8
z
5
0
) f (
f (
f (
) 1
) 3
INPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
(Complex Source Impedance)
f3
Z
S
1
1.78 –
1
f3
7 .
7 .
f1
6
8
Z
S
–
–
GATE (2)
Z
Ω
Z
4 j
3 j
3 j
S
L
1 .
7 .
6 .
f1
8
8
5
DUT
DRAIN (1)
SOURCE (3)
-90
Z
L
OUTPUT MATCH
(Complex Optimum Load Impedance)
4
4
3
6 .
2 .
8 .
5
3
4
Z
L
– j2.50
– j2.44
– j2.40
Ω