AGR18090E TRIQUINT [TriQuint Semiconductor], AGR18090E Datasheet - Page 2

• Manufacturer Part Number: AGR18090E
• Description: 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
• Manufacturer: TRIQUINT [TriQuint Semiconductor]

90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
Table 4. dc Characteristics
Table 5. RF Characteristics
1. Across full DCS band, 1.805 GHz—1.880 GHz.
Drain-source Breakdown Voltage (V
Gate-source Leakage Current (V
Zero Gate Voltage Drain Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Gate Quiescent Voltage (V
Drain-source On-voltage (V
Drain-to-gate Capacitance
Drain-to-source Capacitance
Power Gain
Drain Efficiency
EDGE Linearity Characterization
Output Power
Input Return Loss
Ruggedness
(V
(V
(V
(V
(P
Modulation spectrum @ ±400 kHz
Modulation spectrum @ ±600 kHz
(V
(V
angles)
DS
DS
DS
DS
OUT
DS
DS
= 26 Vdc, V
= 26 Vdc, V
= 26 V, P
= 26 V, P
= 26 V, 1 dB gain compression, I
= 26 V, P
= 30 W, f = 1.840 GHz, V
OUT
OUT
OUT
GS
GS
= 90 W, I
= 90 W, I
= 90 W, I
= 0, f = 1 MHz)
= 0, f = 1 MHz)
Functional Tests (in Agere Systems Supplied Test Fixture)
DS
DS
GS
Parameter
Parameter
DQ
DQ
DQ
= 10 V, I
= 28 V, I
DS
= 10 V, I
GS
= 800 mA)
= 800 mA)
= 800 mA, VSWR = 10:1, all
= 10 V, I
DS
GS
= 5 V, V
= 26 V, I
D
DQ
D
= 0, I
DQ
= 300 µA)
= 1 A)
= 800 mA)
D
= 800 mA)
= 1 A)
DS
(in Supplied Test Fixture)
D
Dynamic Characteristics
DS
DQ
= 200 µA)
= 0 V)
Off Characteristics
On Characteristics
= 28 V, V
300
= 800 mA)
GS
= 0 V)
V
Symbol
V
C
V
Symbol
V
(BR)DSS
GS(TH)
DS(ON)
C
I
C
I
P
G
= 30 °C.
GS(Q)
GSS
IRL
DSS
G
RSS
OSS
1dB
η
ψ
FS
L
No degradation in output
power.
Min
Min
65
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
0.11
Typ
Typ
–63
–73
–12
6.4
3.8
2.1
—
—
—
—
48
14
50
90
September 2003
Max
150
Max
3.0
4.8
—
—
—
—
–8
—
—
—
—
—
—
—
9
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
Vdc
Unit
dBc
dBc
pF
pF
dB
dB
W
S
%