IGBT Chip FEATURES: 600V Trench & Field Stop technology low V CE(sat) low turn-off losses short tail current positive temperature coefficient easy paralleling Chip Type V CE SIGC54T60R3 600V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size ...
MAXIMUM RATINGS: Parameter Collector-emitter voltage collector current, limited by T Pulsed collector current, t limited Gate emitter voltage Operating junction and storage temperature SC data 15V 360V ...
FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation ...