SIGC54T60R3_05 INFINEON [Infineon Technologies AG], SIGC54T60R3_05 Datasheet - Page 2

• Manufacturer Part Number: SIGC54T60R3_05
• Description: IGBT3 Chip
• Manufacturer: INFINEON [Infineon Technologies AG]

MAXIMUM RATINGS:
Parameter
Collector-emitter voltage, T j = 25 C
DC collector current, limited by T
Pulsed collector current, t
Gate emitter voltage
Operating junction and storage temperature
SC data, V
1 )
STATIC CHARACTERISTICS (tested on chip), T j =25 C, unless otherwise specified
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
ELECTRICAL CHARACTERISTICS (verified by design/characterization):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
2)
Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 2, 27.01.2005
values also influenced by parasitic L- and C- in measurement and package.
depending on thermal properties of assembly
GE
= 15V, V
CC
= 360V
p
limited by T
jmax
jmax
Tvj = 150°C
Tvj = 25°C
V
V
V
I
I
R
C
C
C
t
t
t
t
Symbol
CES
GES
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
(BR)CES
CE(sat)
GE(th)
Gint
i s s
o s s
r s s
V
V
f =1MHz
T
V
I
V
R
I
C
C
V
j
C E
G E
C C
G E
G
V
V
= 1 2 5 C
V
=1600µA , V
= 1 0 0A ,
CE
= 3 . 3
GE
CE
GE
= 2 5 V ,
= 0 V ,
= - 1 5 / 1 5 V ,
= 30 0 V ,
=600V , V
Conditions
Conditions
Conditions
=15V, I
=0V , V
=0V , I
V
I
I
V
T
tp
C
c p u l s
j
C E
G E
, T
Symbol
s t g
C
C
GE
= 4mA
=100A
GE
GE
=20V
=V
=0V
SIGC54T60R3
CE
min.
min.
min.
1.05
600
5.0
-40 ... +175
Value
Value
Value
Value
typ.
typ.
6160
1.45
typ.
600
300
384
183
260
5.8
70
25
60
1 )
20
6
8
2
2)
max.
max.
max.
1.85
600
6.5
5.1
Unit
pF
Unit
ns
Unit
Unit
µA
nA
°C
µs
V
A
A
V
V