IXFN280N07_08 IXYS [IXYS Corporation], IXFN280N07_08 Datasheet
IXFN280N07_08
Manufacturer Part Number
IXFN280N07_08
Description
HiPerFET Power MOSFETs Single Die MOSFET
Manufacturer
IXYS [IXYS Corporation]
Datasheet
1.IXFN280N07_08.pdf
(4 pages)
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated
High dV/dt, Low t
Symbol
V
V
V
V
I
I
I
I
E
E
dV/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS Corporation, All rights reserved
D25
L(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
Terminal current limit
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
50/60Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
GS
, V
rr
DSS
, I
DD
D
D
D
= 3mA
≤ V
= 8mA
= 120A, Note 1
DS
DSS
= 0V
, T
t = 1min
t = 1s
T
J
GS
J
≤ 150°C
= 125°C
= 1MΩ
JM
IXFN280N07
Min.
2.0
70
Characteristic Values
-55 ... +150
-55 ... +150
1.3/ 11.5
Maximum Ratings
Typ.
1.5/13
1120
2500
3000
±20
±30
150
280
100
180
600
300
70
70
60
20
30
3
Max.
±200
4.0
100
2
5
Nm/lb.in.
Nm/lb.in.
V/ns
mΩ
mA
mJ
nA
V~
V~
μA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
g
J
V
I
R
t
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
Advantages
Applications
D25
rr
DC-DC converters
Battery chargers
Low voltage relays
International standard package
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped inductive switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Synchronous rectification
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
DS(on)
G
= 280A
≤ ≤ ≤ ≤ ≤ 5mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250ns
= 70V
HDMOS
S
D = Drain
TM
D
process
DS98555C(4/08)
S
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IXFN280N07_08 Summary of contents
Page 1
HiPerFET TM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low t rr Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C, R DGR J V Continuous GSS ...
Page 2
Symbol Test Conditions (T = 25°C, unless otherwise specified 15V 60A , Note iss 0V 25V 1MHz oss rss ...
Page 3
Fig. 1. Extended Output Characteristics @ 25ºC 350 V = 15V GS 10V 300 9V 250 200 150 100 50 0 0.0 0.5 1.0 1 Volts DS Fig Normalized to I DS(on) vs.Drain Current 1.8 V ...
Page 4
Fig. 7. Input Admittance 140 120 100 2.5 3.0 3.5 4 Volts GS Fig. 9. Capacitance 100,000 MHz 10,000 1,000 Volts ...