IXFN280N07_08 IXYS [IXYS Corporation], IXFN280N07_08 Datasheet - Page 2

• Manufacturer Part Number: IXFN280N07_08
• Description: HiPerFET Power MOSFETs Single Die MOSFET
• Manufacturer: IXYS [IXYS Corporation]

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
IXYS reserves the right to change limits, test conditions, and dimensions.
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
Test Conditions
V
V
Gate input resistance
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
F
F
DS
GS
GS
GS
GS
G
= 50A, -di/dt = 100A/μs
= 100A, V
PRELIMINARY TECHNICAL INFORMATION
= 0V
= 15V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
GS
DS
D
DS
DS
= 60A , Note 1
= 25V, f = 1MHz
= 0V, Note 1
4,835,592
4,881,106
= 0.5 • V
= 35V, I
D
4,931,844
5,017,508
5,034,796
DSS
,
= 100A
V
, I
R
D
= 50V
= 90A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
47
Characteristic Values
Characteristic Values
4800
11.5
2650
0.05
Typ.
Typ.
6,162,665
6,259,123 B1
6,306,728 B1
0.74
1.2
360
182
10
78
60
40
90
85
50
1120
280
0.22 °C/W
250
1.3
Max.
Max.
6,404,065 B1
6,534,343
6,583,505
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
A
Ω
A
V
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN280N07
7,005,734 B2
7,063,975 B2
7,157,338B2