IXFN280N07_08 IXYS [IXYS Corporation], IXFN280N07_08 Datasheet - Page 3

• Manufacturer Part Number: IXFN280N07_08
• Description: HiPerFET Power MOSFETs Single Die MOSFET
• Manufacturer: IXYS [IXYS Corporation]

© 2008 IXYS Corporation, All rights reserved
350
300
250
200
150
100
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
120
110
100
50
90
80
70
60
50
40
30
20
10
0
0
0.0
-50
0
Fig. 3. R
V
GS
Fig. 1. Extended Output Characteristics
-25
T
T
0.5
= 10V
V
50
J
J
Fig. 5. Maximum Drain Current vs.
GS
= 125ºC
= 25ºC
15V
External-Lead Current Limit
= 15V
DS(on)
10V
9V
- - - -
0
100
1.0
T
C
Case Temperature
- Degrees Centigrade
vs.Drain Current
Normalized to I
I
25
D
V
DS
150
- Amperes
1.5
@ 25ºC
- Volts
50
2.0
200
8V
7V
6V
5V
75
D
= 140A Value
250
2.5
100
300
3.0
125
350
3.5
150
280
240
200
160
120
330
300
270
240
210
180
150
120
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
40
90
60
30
0
0
0.0
-50
0.4
Fig. 4. R
V
0.2
GS
-25
0.5
= 10V
0.4
Fig. 6. Forward Voltage Drop of
Fig. 2. Output Characteristics
DS(on)
vs. Junction Temperature
0.6
0.6
0
T
J
T
0.8
J
- Degrees Centigrade
Normalized to I
= 125ºC
V
25
0.7
GS
Intrinsic Diode
V
V
1.0
DS
= 15V
SD
@ 125ºC
10V
9V
8V
- Volts
- Volts
1.2
50
0.8
I
D
= 280A
IXFN280N07
1.4
75
0.9
1.6
D
T
J
= 140A Value
= 25ºC
100
1.8
1.0
I
D
2.0
= 140A
7V
6V
5V
125
1.1
2.2
150
2.4
1.2