HUF75332G3_05 FAIRCHILD [Fairchild Semiconductor], HUF75332G3_05 Datasheet - Page 2

• Manufacturer Part Number: HUF75332G3_05
• Description: 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
©2005 Fairchild Semiconductor Corporation
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
1. T
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T
J
= 25
o
C to 150
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20k ) (Note 1) . . . . . . . . . . . . . V
T
GS
C
= 25
= 10V)
T
C
= 25
o
C, Unless Otherwise Specified
o
SYMBOL
V
Q
r
C, Unless Otherwise Specified
BV
t
Q
DS(ON)
Q
t
d(OFF)
GS(TH)
R
R
I
I
d(ON)
t
g(TOT)
Q
Q
DSS
GSS
t
OFF
g(TH)
g(10)
ON
DSS
t
t
gd
gs
r
f
JC
JA
J
I
V
V
V
V
I
(Figure 3)
TO-247
TO-220, TO-263
V
R
R
V
V
V
, T
D
D
DS
DS
GS
GS
DD
GS
GS
GS
L
GS
= 250 A, V
= 60A, V
DGR
DSS
STG
= 0.50 , V
pkg
DM
GS
AS
= 50V, V
= 45V, V
= 20V
= V
= 30V, I
= 0V to 20V
= 0V to 10V
= 0V to 2V
= 6.8
D
D
L
DS
, I
GS
TEST CONDITIONS
D
D
GS
GS
GS
GS
= 10V (Figure 9)
= 250 A (Figure 10)
= 0V
= 0V, T
60A,
= 0V (Figure 11)
10V,
V
I
R
I
(Figure 13)
D
g(REF)
DD
L
= 0.50
C
= 30V,
60A,
= 150
= 1.0mA
o
C
HUF75332G3, HUF75332P3, HUF75332S3S Rev. B1
MIN
55
-55 to 175
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Figure 4
Figure 6
0.97
145
300
260
55
55
60
20
0.016
TYP
2.5
90
50
45
70
40
15
9
6
-
-
-
-
-
-
-
-
-
-
0.019
MAX
1.03
250
130
125
3.0
100
30
62
85
50
1
4
-
-
-
-
-
-
-
UNITS
W/
UNITS
o
o
o
o
o
o
W
V
V
V
A
C/W
C/W
C/W
nA
nC
nC
nC
nC
nC
C
C
C
ns
ns
ns
ns
ns
ns
o
V
V
A
A
C