HUF75332G3_05 FAIRCHILD [Fairchild Semiconductor], HUF75332G3_05 Datasheet - Page 4

• Manufacturer Part Number: HUF75332G3_05
• Description: 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Typical Performance Curves
©2005 Fairchild Semiconductor Corporation
150
120
90
60
30
500
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
0
10
0
1
1000
100
1
FIGURE 7. SATURATION CHARACTERISTICS
50
V
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
10
DSS(MAX)
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1.5
V
V
DS
DS
, DRAIN TO SOURCE VOLTAGE (V)
= 55V
, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
V
GS
3.0
= 10V
V
V
V
GS
10
GS
GS
10
-4
= 20V
= 10V
= 7V
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
4.5
(Continued)
T
T
T
J
C
C
= MAX RATED
= 25
= 25
FIGURE 4. PEAK CURRENT CAPABILITY
6.0
100 s
1ms
10ms
10
o
o
C
V
C
V
100
-3
GS
GS
= 5V
= 6V
200
7.5
t, PULSE WIDTH (s)
10
-2
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
500
100
150
120
10
0.001
90
60
30
0
0
If R = 0
t
If R
t
AV
AV
STARTING T
FIGURE 8. TRANSFER CHARACTERISTICS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
0
T
C
10
AS
= 25
1.5
V
-1
GS
0.01
)/(1.3*RATED BV
J
t
o
AS
AV
, GATE TO SOURCE VOLTAGE (V)
= 150
C
*R)/(1.3*RATED BV
, TIME IN AVALANCHE (ms)
HUF75332G3, HUF75332P3, HUF75332S3S Rev. B1
o
C
3.0
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
0.1
25
DSS
STARTING T
10
STARTING TJ = 25oC
- V
o
0
4.5
C DERATE PEAK
DSS
DD
175 - T
)
150
- V
-55
J
DD
25
C
= 25
1
o
C
) +1]
o
6.0
C
V
o
DD
C
175
= 15V
10
o
C
1
7.5
10