HUF75332G3_05 FAIRCHILD [Fairchild Semiconductor], HUF75332G3_05 Datasheet - Page 7

• Manufacturer Part Number: HUF75332G3_05
• Description: 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

PSPICE Electrical Model
.SUBCKT HUF75332 2 1 3 ;
CA 12 8 1.8e-9
CB 15 14 1.73e-9
CIN 6 8 1.19e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 58.85
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1e-9
LSOURCE 3 7 1e-9
K1 LSOURCE LGATE 0.0085
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 4.5e-3
RGATE 9 20 1.3
RLDRAIN 2 5 10
RLGATE 1 9 10
RLSOURCE 3 7 10
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 5.95e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*180),4.6))}
.MODEL DBODYMOD D (IS = 1.3e-12 RS = 3.0e-3 IKF = 20 XTI = 6 TRS1 = 2.7e-3 TRS2 = 7.0e-7 CJO = 1.7e-9 TT = 4.0e-8 M = 0.45 vj = 0.75)
.MODEL DBREAKMOD D (RS = 1.71e-2 IKF = 1.0e-5 TRS1 = -4.0e-4 TRS2 = -1.55e-5)
.MODEL DPLCAPMOD D (CJO = 1.8e-9 IS = 1e-30 N = 1 M = 0.9 vj = 1.45)
.MODEL MMEDMOD NMOS (VTO = 3.183 KP = 2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.3)
.MODEL MSTROMOD NMOS (VTO = 3.66 KP = 51.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.703 KP = 0.008 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 13)
.MODEL RBREAKMOD RES (TC1 = 1.05e-3 TC2 = 4.5e-7)
.MODEL RDRAINMOD RES (TC1 = 1.16e-2 TC2 = 1.7e-5)
.MODEL RSLCMOD RES (TC1 = 3.96e-3 TC2 = 2.7e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-5)
.MODEL RVTHRESMOD RES (TC1 = -2.8e-3 TC2 = -1.0e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.75e-3 TC2 = 5.0e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8 VOFF= -3)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3 VOFF= -8)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= 0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2005 Fairchild Semiconductor Corporation
GATE
rev 17 February 1999
1
RLGATE
LGATE
9
RGATE
CA
12
20
+
EVTEMP
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
6
8
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
+
-
MSTRO
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
HUF75332G3, HUF75332P3, HUF75332S3S Rev. B1
DBREAK
RSOURCE
17
MWEAK
RVTHRES
RBREAK
11
+
-
17
18
7
+
18
-
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
SOURCE
DRAIN
2
3