IRFP054_11 VISHAY [Vishay Siliconix], IRFP054_11 Datasheet - Page 2

• Manufacturer Part Number: IRFP054_11
• Description: Power MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

IRFP054, SiHFP054
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
ΔV
R
V
R
t
t
R
R
C
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
GSS
DSS
g
Q
Q
DS
L
L
t
SM
I
t
thCS
thJC
t
t
thJA
DS
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
R
V
V
V
= 25 °C, I
GS
GS
g
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
DS
= 6.2 Ω, R
Reference to 25 °C, I
J
= 10 V
= 10 V
= 25 °C, I
= 48 V, V
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
0.24
TEST CONDITIONS
DS
GS
DD
DS
DS
-
-
F
= V
= 0 V, I
= 30 V, I
= 25 V, I
= 60 V, V
V
= 6.4 A, dI/dt = 100 A/μs
V
GS
V
D
DS
S
GS
GS
GS
= 0.45 Ω, see fig. 10
= 90 A, V
= ± 20 V
, I
= 25 V,
I
= 0 V, T
D
= 0 V,
D
D
see fig. 6 and 13
= 64 A, V
D
D
= 250 μA
= 250 μA
GS
= 54 A
= 64 A ,
I
D
= 0 V
D
J
= 54 A
GS
= 1 mA
= 150 °C
G
G
b
= 0 V
DS
= 48 V,
b
b
MAX.
D
S
0.65
D
S
40
b
b
-
b
MIN.
2.0
60
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0447-Rev. C, 14-Mar-11
www.vishay.com/doc?91000
Document Number: 91200
0.056
TYP.
4500
2000
300
160
150
270
5.0
1.1
20
83
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.014
250
160
360
540
4.0
2.5
2.2
S
25
48
54
70
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
μC
pF
ns
ns
Ω
V
V
S
A
V