CBTD3306D,112 NXP Semiconductors, CBTD3306D,112 Datasheet - Page 4

IC FET BUS SWITCH 2BIT 8-SOIC

CBTD3306D,112

Manufacturer Part Number
CBTD3306D,112
Description
IC FET BUS SWITCH 2BIT 8-SOIC
Manufacturer
NXP Semiconductors
Series
74CBTDr
Type
FET Bus Switchr
Datasheet

Specifications of CBTD3306D,112

Circuit
1 x 1:1
Independent Circuits
2
Current - Output High, Low
15mA, 64mA
Voltage Supply Source
Single Supply
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935270513112
CBTD3306D
CBTD3306D
NXP Semiconductors
10. Static characteristics
Table 7.
Voltages are referenced to GND (ground = 0 V).
[1]
[2]
[3]
CBTD3306_4
Product data sheet
Symbol
V
I
I
V
ΔI
C
C
R
I
CC
IK
pass
I
io(off)
ON
CC
All typical values are at V
This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
Measured by the voltage drop between the nA and the nB terminals at the indicated current through the switch. ON resistance is
determined by the lowest voltage of the two (nA or nB) terminals.
Parameter
input clamping voltage
input leakage current
supply current
pass voltage
additional supply current
input capacitance
off-state input/output
capacitance
ON resistance
Static characteristics
CC
= 5 V, T
amb
Conditions
V
V
V
V
see
per input pin; V
one input at 3.4 V, other inputs at
V
control pin; V
port off; V
V
V
V
= 25 °C.
CC
CC
CC
I
CC
CC
CC
CC
= V
All information provided in this document is subject to legal disclaimers.
Figure 6
= 4.5 V; I
= 5.5 V; V
= 5.5 V; I
or GND
= 4.5 V; V
= 4.5 V; V
= 4.5 V; V
CC
or GND
I
= 3 V or 0 V; nOE = V
Rev. 04 — 25 March 2010
to
I
I
SW
= 3 V or 0 V
I
I
I
I
= −18 mA
CC
= GND or 5.5 V
= 0 V; I
= 0 V; I
= 2.4 V; I
Figure 10
= 0 mA;
= 5.5 V;
I
I
= 64 mA
= 30 mA
I
= 15 mA
CC
[2]
[3]
[3]
[3]
Dual bus switch with level shifting
Min
T
-
-
-
-
-
-
-
-
-
-
amb
= −40 °C to +85 °C
Typ
3.2
6.5
3.6
3.6
17
CC
-
-
-
-
-
CBTD3306
[1]
or GND.
© NXP B.V. 2010. All rights reserved.
Max
−1.2
1.5
2.5
±1
35
5
5
-
-
-
pF
Unit
V
μA
mA
V
mA
pF
Ω
Ω
Ω
4 of 17

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