S7183 HAMAMATSU [Hamamatsu Corporation], S7183 Datasheet - Page 2

• Manufacturer Part Number: S7183
• Description: Photo IC diode Linear current amplification of photodiode output
• Manufacturer: HAMAMATSU [Hamamatsu Corporation]

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
POWER SUPPLY
REVERSE BIAS
Spectral response
Operating circuit example
Dimensional outlines (unit: mm)
(SPECIFIED AT THE LEAD ROOT)
DRAWING WITHIN DASHED
LINE SHOWS SCHEMATIC
DIAGRAM OF PHOTO IC DIODE.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.6 ± 0.3
0
200
10˚
5˚
0.45
(INCLUDING BURR)
4.3 ± 0.3
2.54 ± 0.5
400
4.15
CATHODE
ANODE
CATHODE
WAVELENGTH (nm)
600
1.7
(Typ. Ta=25 ˚C, V
800
R 0.9
10˚
0.6
S7183
0.45
1000
1.4
3.0
2.4
Tolerance unless otherwise
noted: ±0.2, ±2˚
Shaded area indicates burr.
Values in parentheses are not
guaranteed, but for reference.
R
=5 V)
1200
5˚
KPICB0036EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2009 Hamamatsu Photonics K.K.
Dark current vs. ambient
temperature
100 nA
100 pA
100 fA
10 A
10 nA
10 pA
1 A
1 nA
1 pA
LOAD RESISTANCE
-25
KPICA0017EB
AMBIENT TEMPERATURE (˚C)
0
ANODE
R
L
25
KPICC0018EA
LOAD CAPACITANCE
FOR
LOW-PASS FILTER C
50
(Typ. V
75
1.5
0.7
±
±
Photo IC diode
R
0.4
0.3
=5 V)
L
Pins
connected to
PC board.
100
The photodiode must be reverse-biased
so that a positive potential is applied to the
cathode.
components, we recommend placing a
load capacitance C
resistance R
KPICB0042EA
Cut-off frequency fc
(INCLUDING BURR)
7.0
4.1
4.0*
10˚
5˚
±
±
and
0.3
0.2
CENTER OF
ACTIVE AREA
Rise/fall time vs. load resistance
0.7
1.5
must be
on the
To
±
±
0.01
100
L
0.1
0.4
0.3
10
1
100
as a low-pass filter.
S7184
eliminate
S7183, S7184
(Typ. Ta=25 ˚C, V
L
1 k
LOAD RESISTANCE ( )
in parallel with load
Tolerance unless otherwise
noted:
Shaded area indicates burr.
Chip position accuracy with
respect to the package
dimensions marked *
X ±0.25, Y ±0.25, G ±2˚
CATHODE
(ANODE)
ANODE
(ANODE)
2 C
±0.1, ±2˚
high-frequency
10 k
1
10˚
0.8
R
=5 V, =560 nm, Vo=2.5 V)
L
R
1.8
L
100 k
5˚
Cat. No. KPIC1022E03
Aug. 2009 DN
1 M
KPICA0018EB
KPICB0043EA