K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 14

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K4T51043QG

Manufacturer Part Number
K4T51043QG
Description
512Mb G-die DDR2 SDRAM Specification
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet

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7.6 Differential input AC logic Level
Note :
1. V
2. The typical value of V
3. For information related to V
7.7 Differential AC output parameters
Note :
1. The typical value of V
8.0 ODT DC electrical characteristics
Note :
1. Test condition for Rtt measurements
Measurement Definition for Rtt(eff) : Apply V
Measurement Definition for V
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
Deviation of VM with respect to V
V
and V
indicates the voltage at which differential input signals must cross.
tude allowed for overshoot and undershoot.
OX
ID
V
Symbol
Symbol
V
V
(AC) specifies the input differential voltage |V
OX
(AC) indicates the voltage at which differential output signals must cross.
ID
IX
(AC)
(AC)
CP
(AC)
is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
AC differential cross point voltage
IX
OX
(AC) is expected to be about 0.5 * V
(AC) is expected to be about 0.5 * V
AC differential cross point voltage
PARAMETER/CONDITION
M
PEAK
AC differential input voltage
: Measure voltage (V
V
V
DDQ
value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
CP
TR
V
/2
IH
delta V
Parameter
Parameter
(AC), V
Rtt(eff) =
IH
M
(AC) and V
IL
=
(AC), and V
TR
M
I(V
-V
) at test pin (midpoint) with no load.
< Differential signal levels >
V
2 x V
V
IH
CP
IH
DDQ
(AC) - V
(AC)) - I(V
| required for switching, where V
IL
M
(AC) to test pin separately, then measure current I(V
DDQ
DDQ
DDQ
- 1
of the transmitting device and V
values defined in SSTL_18
V
V
IL
of the transmitting device and V
DDQ
SSQ
(AC)
V
IL
ID
(AC))
x 100%
14 of 47
0.5 * V
0.5 * V
DDQ
DDQ
Min.
Min.
0.5
SYMBOL
delta V
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
- 0.175
- 0.125
TR
V
is the true input signal (such as CK, DQS, LDQS or UDQS)
M
IX or
IX
(AC) is expected to track variations in V
OX
Crossing point
(AC) is expected to track variations in V
V
MIN
120
60
40
- 6
OX
0.5 * V
0.5 * V
V
DDQ
DDQ
Max.
Max.
NOM
DDQ
IH
150
Rev. 1.4 December 2008
75
50
(AC)) and I( V
+ 0.175
IH
+ 0.125
(AC) - V
DDR2 SDRAM
MAX
180
+ 6
90
60
IL
(AC).
IL
UNITS
(AC)) respectively.
Units
Units
ohm
ohm
ohm
V
V
V
%
DDQ
DDQ
NOTES
. V
Notes
Note
IX
1
1
1
1
.
1
2
1
(AC)

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