K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 15

• Manufacturer Part Number: K4T51043QG
• Description: 512Mb G-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QG
K4T51083QG
K4T51163QG
9.0 OCD default characteristics
Note :
1. Absolute Specifications (0°C ≤ T
2. Impedance measurement condition for output source dc current: V
3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage.
4. Slew rate measured from V
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaran-
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.
Output slew rate load :
7. DRAM output slew rate specification applies to 400Mb/sec/pin, 533Mb/sec/pin, 667Mb/sec/pin and 800Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is included in tDQSQ and tQHS specification.
Output impedance
Output impedance step size for OCD calibration
Pull-up and pull-down mismatch
Output slew rate
ues of V
Iol must be less than 23.4 ohms for values of VOUT between 0V and 280mV.
teed by design and characterization.
OUT
between V
Description
DDQ
IL
and V
(AC) to V
CASE
DDQ
≤ +95°C; V
- 280mV. Impedance measurement condition for output sink dc current: V
IH
(AC).
Output
(V
DD
OUT
Parameter
= +1.8V ±0.1V, V
)
Sout
DDQ
V
TT
DDQ
15 of 47
= 1.7V; VOUT = 1420mV; (V
25 ohms
See full strength default driver characteristics
Min
1.5
= +1.8V ±0.1V)
0
0
on device operation specification
18ohm at norminal condition
Reference
Point
Nom
OUT
-V
DDQ
)/Ioh must be less than 23.4 ohms for val-
Max
1.5
DDQ
Rev. 1.4 December 2008
4
5
= 1.7V; V
DDR2 SDRAM
OUT
ohms
ohms
ohms
V/ns
Unit
= 280mV; V
1,4,5,6,7,8
Notes
1,2,3
1,2
OUT
6
/