K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 35

• Manufacturer Part Number: K4T51043QG
• Description: 512Mb G-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QG
K4T51083QG
K4T51163QG
DQS
Note1
V
V
V
V
Hold Slew Rate
V
V
Note : DQS signal must be monotonic between V
Rising Signal
IL
IL
REF
DDQ
IH
IH
(DC)max
(AC)max
(AC)min
(DC)min
Figure 12 - IIIustration of tangent line for tDH (single-ended DQS)
(DC)
V
V
V
V
V
V
V
DDQ
IH
IH
REF
IL
IL
SS
(DC)max
(AC)max
(AC)min
(DC)min
V
(DC)
SS
=
dc to V
dc to V
region
region
tangent line [ V
REF
REF
∆TR
tDS
REF
tangent
line
(DC) - V
tDH
35 of 47
IL
Hold Slew Rate
Falling Signal
(DC)max ]
∆TR
IL
(DC)max and V
nominal
line
=
tangent line [ V
tDS
IH
tangent
(DC)min.
line
tDH
∆TF
IH
∆TF
(DC)min - V
nominal
line
Rev. 1.4 December 2008
DDR2 SDRAM
REF
(DC) ]