K4T56043QF-GCD5 SAMSUNG [Samsung semiconductor], K4T56043QF-GCD5 Datasheet - Page 11

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K4T56043QF-GCD5

Manufacturer Part Number
K4T56043QF-GCD5
Description
256Mb F-die DDR2 SDRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
256Mb F-die DDR2 SDRAM
Differential input AC logic Level
Notes:
1. V
LDQS or UDQS) and V
- V
2. The typical value of V
in VDDQ . V
Differential AC output parameters
Note :
1. The typical value of V
in VDDQ . V
IL
V
V
V
Symbol
Symbol
ID
(AC).
OX
ID
IX
(AC) specifies the input differential voltage |V
(AC)
(AC)
(AC)
IX
OX
(AC) indicates the voltage at which differential input signals must cross.
AC differential cross point voltage
(AC) indicates the voltage at which differential output signals must cross.
AC differential cross point voltage
AC differential input voltage
CP
OX
IX
(AC) is expected to be about 0.5 * VDDQ of the transmitting device and V
V
is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
V
(AC) is expected to be about 0.5 * VDDQ of the transmitting device and V
CP
TR
Parameter
Parameter
< Differential signal levels >
TR
-V
CP
0.5 * VDDQ - 0.175
0.5 * VDDQ - 0.125
| required for switching, where V
Page 11 of 27
V
V
DDQ
SSQ
V
Min.
Min.
ID
0.5
0.5 * VDDQ + 0.175
0.5 * VDDQ + 0.125
V
DDQ
V
Max.
Max.
IX or
+ 0.6
TR
Crossing point
is the true input signal (such as CK, DQS,
V
OX
OX
IX
(AC) is expected to track variations
(AC) is expected to track variations
Units
Units
V
V
V
Rev. 1.5 Feb. 2005
DDR2 SDRAM
Notes
Note
1
2
1
IH
(AC)

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