K4T56043QF-GCD5 SAMSUNG [Samsung semiconductor], K4T56043QF-GCD5 Datasheet - Page 16

• Manufacturer Part Number: K4T56043QF-GCD5
• Description: 256Mb F-die DDR2 SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

256Mb F-die DDR2 SDRAM
Input/Output capacitance
Electrical Characteristics & AC Timing for DDR2-667/533/400
Refresh Parameters by Device Density
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Refresh to active/Refresh command
time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tRCD
tRP
tRC
tRAS
Speed
(0 °C < T
Parameter
CASE
Parameter
< 95 °C; V
3.75
min
DDR2-667(E6)
15
15
54
39
5
3
5 - 5- 5
DDQ
70000
max
8
8
8
= 1.8V + 0.1V; V
tRFC
tREFI
3.75
min
DDR2-533(D5)
15
15
55
40
5
-
85 °C < T
0 °C ≤ T
Symbol
4 - 4 - 4
Page 16 of 27
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
DD
CASE
70000
CASE
max
8
8
= 1.8V + 0.1V)
-
≤ 85°C
≤ 95°C
Min
1.0
1.0
2.5
x
x
x
DDR2-400
DDR2-533
DDR2-400(CC)
min
15
15
55
40
5
5
-
256Mb
3 - 3 - 3
7.8
3.9
75
Max
0.25
0.25
2.0
2.0
4.0
0.5
70000
max
8
8
-
512Mb
105
7.8
3.9
Min
1.0
1.0
2.5
x
x
x
DDR2-667
Units
ns
ns
ns
ns
ns
ns
ns
127.5
1Gb
7.8
3.9
Max
0.25
0.25
2.0
2.0
3.5
0.5
Rev. 1.5 Feb. 2005
DDR2 SDRAM
2Gb
195
7.8
3.9
Units
pF
pF
pF
pF
pF
pF
327.5
4Gb
7.8
3.9
Units
ns
µs
µs