K4S511633C SAMSUNG [Samsung semiconductor], K4S511633C Datasheet - Page 5

• Manufacturer Part Number: K4S511633C
• Description: 32Mx16 Mobile SDRAM 54CSP 1/CS
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S511633C-YL/N/P
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S511633C-YL**
4. K4S511633C-YN**
5. K4S511633C-YP**
6. Unless otherwise noted, input swing IeveI is CMOS(V
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
Symbol
I
I
I
I
C C 2
I
CC2
C C 3
I
CC3
I
I
CC2
CC3
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS CKE & CLK
PS CKE & CLK
P
N
P
N
Burst length = 1
t
I
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks Activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
R C
R C
V
V
V
V
V
V
0.2V
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IH
IL
IL
Test Condition
(max), t
(max), t
/V
CC
CC
IL
SS
= 10ns
= 10ns
=V
V
V
= 0V, T
V
V
IH
IH
DDQ
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
/V
=
=
SSQ)
A
CC
CC
=Commercial, Extended and Industrial)
CC
CC
= 10ns
= 10ns
=
=
-YN
-YL
-YP
160
230
350
-80
Version
1800
-1H
155
210
335
35
25
15
15
50
45
2
2
CMOS SDRAM
Rev. 1.2 Dec. 2002
145
210
305
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4
5