K9F1208B0B SAMSUNG [Samsung semiconductor], K9F1208B0B Datasheet - Page 15

• Manufacturer Part Number: K9F1208B0B
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208R0B
K9F1208B0B
K9F1208U0B
AC CHARACTERISTICS FOR OPERATION
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device resetting time(Read/Program/Erase)
K9F1208X0B-
Y,V,P,F only
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
4. TBD means "To Be Determinded".
Parameter
Last RE High to Busy(at sequential read)
CE High to Ready(in case of interception by CE at read)
CE High Hold Time(at the last serial read)
Parameter
Symbol
t
t
t
t
t
t
t
t
t
WHR
t
t
t
t
REA
CEA
RHZ
CHZ
t
REH
CLR
RST
t
t
RR
WB
RC
OH
AR
RP
IR
R
1.8V
10
10
20
40
60
15
20
60
0
-
-
-
-
-
-
-
(2)
15
Min
2.7V
10
10
20
25
50
15
15
60
0
-
-
-
-
-
-
-
ting time.
3.3V
Symbol
10
10
20
25
50
15
15
60
0
-
-
-
-
-
-
-
t
t
t
CRY
CEH
RB
5/10/500
1.8V
100
15
40
55
30
20
-
-
-
-
-
-
-
-
-
Min
100
-
-
(1)
FLASH MEMORY
5/10/500
Max
2.7V
100
15
30
45
30
20
-
-
-
-
-
-
-
-
-
50 +tr(R/B)
Preliminary
(1)
Max
100
5/10/500
-
3.3V
100
15
30
45
30
20
-
-
-
-
-
-
-
-
-
(3)
(1)
Unit
Unit
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs