K9F1208B0B SAMSUNG [Samsung semiconductor], K9F1208B0B Datasheet - Page 43

• Manufacturer Part Number: K9F1208B0B
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208R0B
K9F1208B0B
K9F1208U0B
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read . The R/B pin is normally high but transitions to low after program or erase command is written to the command register or ran-
dom read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is an open-
drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and current
drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 23). Its value can be deter-
mined by the following guidance.
V
CC
GND
Device
open drain output
R/B
Rp
ibusy
Figure 23. Rp vs tr ,tf & Rp vs ibusy
C
L
Ready Vcc
43
1.8V device - V
2.7V device - V
3.3V device - V
tf
VOL
OL
OL
OL
: 0.1V, V
: 0.4V, V
: 0.4V, V
Busy
FLASH MEMORY
OH
OH
OH
: Vcc
: Vcc
: 2.4V
Q
Q
Preliminary
-0.1V
-0.4V
tr
VOH