M464S3323BN0-C1H/L1H SAMSUNG [Samsung semiconductor], M464S3323BN0-C1H/L1H Datasheet - Page 5

• Manufacturer Part Number: M464S3323BN0-C1H/L1H
• Description: 144pin SDRAM SODIMM
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
M464S3323BN0
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
Shrink-TSOP
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70 C)
IH
V
V
V
V
IH
IH
/V
CC
CC
IL
IL
(min), t
(min), t
IL
(max), t
(max), t
=V
=
=
DDQ
CC
CC
CC
CC
/V
= 10ns
= 10ns
SSQ
=
=
)
C
L
144pin SDRAM SODIMM
-1H
Version
1,120
1,240
1,920
12.8
320
112
480
320
16
16
80
80
24
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2