M464S3323BN0-C1H/L1H SAMSUNG [Samsung semiconductor], M464S3323BN0-C1H/L1H Datasheet - Page 7

• Manufacturer Part Number: M464S3323BN0-C1H/L1H
• Description: 144pin SDRAM SODIMM
• Manufacturer: SAMSUNG [Samsung semiconductor]

Notes :
AC CHARACTERISTICS
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
M464S3323BN0
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
t
SAC
t
t
SHZ
SLZ
CC
OH
CH
CL
SS
SH
Shrink-TSOP
Min
10
10
3
3
3
3
2
1
1
-1H
1000
Max
6
6
6
6
144pin SDRAM SODIMM
Min
10
12
3
3
3
3
2
1
1
-1L
1000
Max
6
7
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2