M470L1624FT0-CA2 SAMSUNG [Samsung semiconductor], M470L1624FT0-CA2 Datasheet - Page 13

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M470L1624FT0-CA2

Manufacturer Part Number
M470L1624FT0-CA2
Description
DDR SDRAM SODIMM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
128MB, 256MB SODIMM
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333 & DDR266 devices to ensure proper sys-
tem performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
PARAMETER
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
Mode register set cycle time
DQ & DM setup time to DQS
DQ & DM hold time to DQS
Control & Address input pulse width
DQ & DM input pulse width
Power down exit time
Exit self refresh to non-Read command
Exit self refresh to read command
Refresh interval time
Output DQS valid window
Clock half period
Data hold skew factor
DQS write postamble time
Active to Read with Auto precharge
command
Autoprecharge write recovery +
Precharge time
Input Slew Rate
Input Slew Rate
0.5 V/ns
0.4 V/ns
0.3 V/ns
0.5 V/ns
0.4 V/ns
0.3 V/ns
Parameter
AC CHARACTERISTICS
+100
+150
+50
tDS
+75
tIS
0
0
Symbol
tXSNR
tXSRD
tWPST
tDIPW
tPDEX
tMRD
tREFI
tQHS
tRAP
tIPW
tDAL
tDH
tQH
tDS
tHP
+150
tDH
+75
tIH
0
0
0
0
or tCHmin
(tWR/tCK)
(tRP/tCK)
tCLmin
-tQHS
(DDR333@CL=2.5))
Min
0.45
0.45
1.75
200
tHP
2.2
0.4
DCSLEW
12
75
18
SYMBOL
6
+
B3
Units
Units
ps
ps
ps
ps
ps
ps
Max
0.55
TBD
7.8
0.6
MIN
-
-
DDR333
Notes
Notes
(tWR/tCK)
MAX
or tCHmin
TBD
(tRP/tCK)
k
k
k
tCLmin
i
i
i
-tQHS
(DDR266@CL=2.0)
Min
1.75
200
tHP
0.5
0.5
2.2
7.5
0.4
15
75
20
+
A2
TBD
MIN
DDR266
Max
0.75
7.8
0.6
-
-
MAX
TBD
or tCHmin
(tWR/tCK)
(tRP/tCK)
tCLmin
-tQHS
(DDR266@CL=2.5))
1.75
Min
200
tHP
0.5
0.5
2.2
7.5
0.4
Units
V/ns
15
75
20
Rev. 1.2 March 2004
+
B0
Notes
a, m
DDR SDRAM
Max
0.75
7.8
0.6
-
-
Unit
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
10, 11
Note
j, k
j, k
11
11
13
8
8
4
2

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