M470L3324CU0-CA2 SAMSUNG [Samsung semiconductor], M470L3324CU0-CA2 Datasheet
M470L3324CU0-CA2
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M470L3324CU0-CA2 Summary of contents
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... Unbuffered SODIMM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb C-die 66 TSOP-II with Pb-Free INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY ...
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... Non ECC Module (M470L6524CU0)....................................................................................... 7.0 Absolute Maximum Ratings........................................................................................................ 8 8.0 DC Operating Conditions............................................................................................................ 8 9.0 DDR SDRAM IDD spec table ....................................................................................................... 9 9.1 M470L3324CU0 [ (32M x 16 256MB Non ECC Module ] 9.2 M470L6524CU0 [ (32M x 16 512MB Non ECC Module ] 10.0 AC Operating Conditions........................................................................................................ 10 11.0 Input/Output Capacitance ....................................................................................................... 10 12.0 AC Timming Parameters & Specifications ............................................................................ 11 13 ...
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Unbuffered SODIMM Revision History Revision Month Year 0.0 April 2004 0.1 September 2004 0.2 October 2004 1.0 February 2005 1.1 April 2005 1.2 June 2005 - First version for internal review - Preliminary spec release. - Changed IDD ...
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... Unbuffered SODIMM 200Pin Unbuffered SODIMM based on 512Mb C-die (x8, x16) 1.0 Ordering Information Part Number M470L3324CU0-C(L)CC/B3/A2/B0 M470L6524CU0-C(L)CC/B3/A2/B0 2.0 Operating Frequencies CC(DDR400@CL=3) Speed @CL2 Speed @CL2.5 166MHz Speed @CL3 200MHz CL-tRCD-tRP 3-3-3 3.0 Feature • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • ...
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... DQS4 Note : These pins are not used in this module. 2. Pins 71, 72, 73, 74, 77, 78, 79, 80, 83, 84 are not used on x64(M470~ ) module, & used on x72(M485 ~ ) module. 3. Pins 95,122 are NC for 1Row module & used for 2Row moule(M470L6524CU0,M485L2829CU0). 5.0 Pin Description Pin Name A0 ~ A12 ...
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... Unbuffered SODIMM 6.0 Functional Block Diagram 6.1 256MB, 32M x 64 Non ECC Module (M470L3324CU0) (Populated as 1 bank of x16 DDR SDRAM Module) CS0 DQS0 LDQS CS DM0 LDM I/0 11 DQS1 UDQS DM1 ...
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... Unbuffered SODIMM 6.2 512MB, 64M x 64 Non ECC Module (M470L6524CU0) (Populated as 2 bank of x16 DDR SDRAM Module) CS1 CS0 DQS0 LDQS CS DM0 LDM I/0 8 DQS1 UDQS DM1 UDM DQ 8 I/0 7 ...
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Unbuffered SODIMM 7.0 Absolute Maximum Ratings Parameter Voltage on any pin relative Voltage on V & V supply relative DDQ Storage temperature Power dissipation Short circuit current Note : Permanent device damage ...
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... Unbuffered SODIMM 9.0 DDR SDRAM IDD spec table 9.1 M470L3324CU0 [ (32M x 64) 256MB Module ] Symbol CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) IDD0 480 IDD1 640 IDD2P 20 IDD2F 120 IDD2Q 100 IDD3P 180 IDD3N 240 IDD4R 760 IDD4W 860 IDD5 880 Normal 20 IDD6 Low power ...
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... VIH(AC) VIL(AC) VID(AC) VIX(AC) of the transmitting device and must track variations in the DC level of the same. DDQ V =0.5*V tt DDQ R =50Ω T Z0=50Ω C =30pF LOAD Output Load Circuit (SSTL_2) M470L3324CU0 Symbol Min CIN1 41 CIN2 34 CIN3 34 CIN4 25 CIN5 6 Cout1 6 DDR SDRAM Min Max Unit VREF + 0 ...
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Unbuffered SODIMM 12.0 AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data in ...
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Unbuffered SODIMM 13.0 System Characteristics for DDR SDRAM The following specification parameters are required in systems using DDR333, DDR266 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. Table ...
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Unbuffered SODIMM 14.0 Component Notes 1. All voltages referenced to Vss. 2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels, but the related speci- fications and device ...
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Unbuffered SODIMM 15.0 System Notes: a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2. b. Pulldown slew rate is measured under the test conditions shown in Figure 3. c. Pullup slew rate ...
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Unbuffered SODIMM 16.0 Command Truth Table COMMAND Register Extended MRS Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Bank Active & Row Addr. Auto Precharge Disable Read & Column Address Auto Precharge Enable Auto Precharge Disable ...
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... Unbuffered SODIMM 17.0 Physical Dimensions 17.1 32M x 64 (M470L3324CU0) ± 0.16 0.039 ± (4.00 0.10) 1 0.086 0.456 2.15 11.40 0.07 (1.8+/-0.1) 0.098 2.45 2 0.150 Max (3.80 Max) ± 0.04 0.0039 ± (1.00 0.10) Tolerances : ±.006(.15) unless otherwise specified The used device is 32Mx16 SDRAM, TSOPII SDRAM Part No. : K4H511638C-U*** 2.70 (67.60) 2.50 (63.60 1.896 (47.40) 0.17 (4.20) 0.096 (2.40+/-0. ± ...
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Unbuffered SODIMM 17.2 64Mx64 (M470L6524CU0) ± 0.16 0.039 ± (4.00 0.10) 1 0.086 0.456 2.15 11.40 0.07 (1.8+/-0.1) 0.098 2.45 2 0.150 Max (3.80 Max) ± 0.04 0.0039 ± (1.00 0.10) Tolerances : ±.006(.15) unless otherwise specified The ...