M378B2873GB0 SAMSUNG [Samsung semiconductor], M378B2873GB0 Datasheet - Page 28

• Manufacturer Part Number: M378B2873GB0
• Description: 240pin Unbuffered DIMM based on 1Gb G-die
• Manufacturer: SAMSUNG [Samsung semiconductor]

Unbuffered DIMM
[ Table 16 ] DDR3-1066 Speed Bins
[ Table 17 ] DDR3-1333 Speed Bins
Internal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6
CL = 7
CL = 8
Supported CL Settings
Supported CWL Settings
Internal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
Supported CL Settings
Supported CWL Settings
Parameter
Parameter
CL-nRCD-nRP
CL-nRCD-nRP
Speed
Speed
CWL = 5,6
CWL = 5,6
CWL = 5
CWL = 6
CWL = 7
CWL = 5
CWL = 6
CWL = 7
CWL = 5
CWL = 6
CWL = 7
CWL = 7
CWL = 7
CWL = 5
CWL = 6
CWL = 5
CWL = 6
CWL = 5
CWL = 6
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
Symbol
Symbol
tRCD
tRCD
tRAS
tRAS
tRP
tRC
tRP
tRC
tAA
tAA
datasheet
13.5 (13.125)
13.5 (13.125)
13.5 (13.125)
49.5 (49.125)
- 28 -
13.125
13.125
13.125
50.625
1.875
1.875
1.875
1.875
37.5
min
2.5
min
2.5
1.5
36
9
9
9
9
DDR3-1066
DDR3-1333
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
7 - 7 - 7
9 -9 - 9
6,7,8,9
6,7,8
5,6,7
5,6
9*tREFI
9*tREFI
<1.875
max
<2.5
<2.5
3.3
max
<2.5
<2.5
20
3.3
-
-
-
20
-
-
-
DDR3 SDRAM
Units
nCK
nCK
Units
nCK
nCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2,3,4,9
1,2,3,4,6
1,2,3,4,6
1,2,3,4,9
1,2,3,5
1,2,3,4
1,2,3,6
1,2,3,4
1,2,3,6
1,2,3,4
NOTE
NOTE
Rev. 1.2
1,2,3
1,2,3
4
4
4
4
4
4
4