M378B2873GB0 SAMSUNG [Samsung semiconductor], M378B2873GB0 Datasheet - Page 4

• Manufacturer Part Number: M378B2873GB0
• Description: 240pin Unbuffered DIMM based on 1Gb G-die
• Manufacturer: SAMSUNG [Samsung semiconductor]

Unbuffered DIMM
1. DDR3 Unbuffered DIMM Ordering Information
NOTE :
1. "##" - F8/H9/K0/MA
2. F8 - 1066Mbps 7-7-7 / H9 - 1333Mbps 9-9-9 / K0 - 1600Mbps 11-11-11 / MA - 1866Mbps 13-13-13
2. Key Features
3. Address Configuration
• JEDEC standard 1.5V ± 0.075V Power Supply
• V
• 400MHz f
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10,11,13
• Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9 (DDR3-1866)
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
• Bi-directional Differential Data Strobe
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower then T
• Asynchronous Reset
- DDR3-1866(13-13-13) is backward compatible to DDR3-1600(11-11-11), DDR3-1333(9-9-9), DDR3-1066(7-7-7)
- DDR3-1600(11-11-11) is backward compatible to DDR3-1333(9-9-9), DDR3-1066(7-7-7)
- DDR3-1333(9-9-9) is backward compatible to DDR3-1066(7-7-7)
CAS Latency
write [either On the fly using A12 or MRS]
933MHz f
M378B2873GB0-CF8/H9/K0/MA
M391B2873GB0-CF8/H9/K0/MA
M378B5673GB0-CF8/H9/K0/MA
M391B5673GB0-CF8/H9/K0/MA
tRCD(min)
tRAS(min)
tCK(min)
tRP(min)
tRC(min)
DDQ
Speed
128x8(1Gb) based Module
= 1.5V ± 0.075V
Part Number
CK
CK
Organization
for 800Mb/sec/pin, 533MHz f
for 1866Mb/sec/pin
DDR3-800
2
6-6-6
37.5
52.5
2.5
15
15
6
CK
Density
1GB
1GB
2GB
2GB
Row Address
for 1066Mb/sec/pin, 667MHz f
DDR3-1066
CASE
13.125
13.125
50.625
A0-A13
1.875
7-7-7
37.5
7
85°C, 3.9us at 85°C < T
datasheet
Organization
128Mx64
128Mx72
256Mx64
256Mx72
DDR3-1333
Column Address
- 4 -
9-9-9
13.5
13.5
49.5
1.5
36
9
CK
CASE
A0-A9
for 1333Mb/sec/pin, 800MHz f
128Mx8(K4B1G0846G-BC##)*16
128Mx8(K4B1G0846G-BC##)*18
128Mx8(K4B1G0846G-BC##)*8
128Mx8(K4B1G0846G-BC##)*9
≤ 95°C
Component Composition
DDR3-1600
11-11-11
13.75
13.75
48.75
1.25
11
35
Bank Address
BA0-BA2
CK
for 1600Mb/sec/pin,
DDR3-1866
13-13-13
DDR3 SDRAM
13.91
13.91
47.91
1.07
13
34
Number of
Rank
Auto Precharge
1
1
2
2
A10/AP
Rev. 1.2
Height
Unit
30mm
30mm
30mm
30mm
tCK
ns
ns
ns
ns
ns