EDI8L21664V ETC1 [List of Unclassifed Manufacturers], EDI8L21664V Datasheet

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EDI8L21664V

Manufacturer Part Number
EDI8L21664V
Description
External SRAM Memory Solution
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
DSP Memory Solution
3.3V Operating Supply Voltage
Access Times of 10, 12 and 15ns
Single Write Control and Output Enable Lines
One Chip Enable Line per Memory Bank
50% Space Savings vs. Monolithic TSOPs
Upgrade Path Available in Same Footprint
Multiple VCC and VSS Pins
Reduced Inductance and Capacitance
74 pin BGA, JEDEC MO-151
Features
C
D
G
H
A
B
E
F
K
Pin Configurations
J
L
VSS
VSS
VSS
VSS
VSS
A15A CE1\
N/C
VSS
VSS
VSS
A15B A13
1
1
• Texas Instruments TMS320C54x
CE2\
VCC
VCC
VSS
VSS
VSS
WE\
A14
A12
2
2
VCC DQ15 DQ14
VCC
VCC
VCC
3
3
• One Research Drive • Westborough, MA 01581 USA • 508-366-5151 • FAX 508-836-4850 •
VSS
A10
A11
4
4
VSS
A8
A9
5
5
VCC DQ13 DQ11
VCC DQ12 DQ10
VCC
VCC
VSS
VSS
6
6
A6
A7
7
7
VSS
A4
8
8
Electronic Designs Incorporated
http://www.electronic-designs.com
EDI8L21664V Rev. 0 1/98 ECO #9704
DQ9
DQ4
A2
A5
9
9
DQ8
VCC
VSS
VSS
VSS
DQ3
DQ5
DQ6
DQ2
A0
A3
10
10
1
VCC
VCC
VCC
VCC
DQ7
DQ0
DQ1
N/C
N\C
A1
11
11
G\
TMS320C54x External SRAM
Memory Solution
The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM
constructed with two 64Kx16 die mounted on a multi-
layer laminate substrate. The device is packaged in a 74
lead, 15mm by 15mm, BGA.
Operating with a 3.3V power supply and with access
times as fast as 10ns, the device allows the user to
develop a fast external memory for Texas Instuments'
TMS320C54x DSP.
The device consists of two separate banks of 64Kx16 of
memory. Each bank has a separate Chip Enable pin and
higher order address select pin. Bank 'A' is controlled
using CE1\ and A15A. Bank 'B' is controlled using CE2\
and A15B. The two banks have common I/Os (DQ0-15)
and control lines (WE\ and G\).
A
B
C
D
E
F
G
H
J
K
L
EDI8L21664V
2x64Kx16 SRAM

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EDI8L21664V Summary of contents

Page 1

... One Research Drive • Westborough, MA 01581 USA • 508-366-5151 • FAX 508-836-4850 • TMS320C54x External SRAM Memory Solution The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi- layer laminate substrate. The device is packaged lead, 15mm by 15mm, BGA. ...

Page 2

... Chip Enable: This active LOW input is used to enable the 'A' Bank of the device. Chip Enable: This active LOW input is used to enable the 'B' Bank of the device. Output Enable: This active LOW asynchronous input enables the data output drivers. Data Inputs/Outputs Core power supply: +3.3V -5%/+10% Ground 2 EDI8L21664V Rev. 0 1/98 ECO #9704 DQ0-DQ15 ...

Page 3

... VCC -0.2; all inputs static; CLK frequency = 0 Device deselected; all inputs VIL or VIH; all inputs static; VCC=MAX; CLK frequency = 0 0V VIN VCC Output(s) disabled, 0V VOUT VCC IOH = -4.0mA IOL = 8.0mA 3 EDI8L21664V Rev. 0 1/98 ECO #9704 EDI8L21664V 2x64Kx16 SRAM Sym Min Max Units VIH 2 ...

Page 4

... EDI8L21664V Rev. 0 1/98 ECO #9704 15ns Min Max Units ...

Page 5

... Write Cycle Controlled Write Cycle Controlled 5 EDI8L21664V Rev. 0 1/98 ECO #9704 EDI8L21664V 2x64Kx16 SRAM ...

Page 6

... One Research Drive • Westborough, MA 01581USA • 508-366-5151 • FAX 508-836-4850 • EDI8L21664V 2x64Kx16 SRAM Electronic Designs Inc. reserves the right to change specifications without notice. CAGE No. 66301 Industrial Temperature Range (-40°C to +85°C) Package Part Number No. EDI8L21664V15BI 15.0 max. 1.27 Electronic Designs Incorporated http://www.electronic-designs.com 6 EDI8L21664V Rev. 0 1/98 ECO #9704 Speed Package (ns) No. 15 15.0 max. ...

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