EDI8L21664V ETC1 [List of Unclassifed Manufacturers], EDI8L21664V Datasheet - Page 4

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EDI8L21664V

Manufacturer Part Number
EDI8L21664V
Description
External SRAM Memory Solution
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
EDI8L21664V
2x64Kx16 SRAM
Read Cycle 1 - W High, G, E Low
Read Cycle 2 - W High
AC Characteristics Read Cycle
Read Cycle
Read Cycle Time
Address Access Time
Chip Enable Access
Output Hold from Address Change
Chip Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Enable access time
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
Write Cycle
Write Cycle Time
Chip Enable to End of Write
Address valid to End of Write,
with G\ HIGH
Address Setup Time
Address Hold from End of Write
Write Pulse Width
Write Pulse Width, with G\ HIGH
Data Setup Time
Data Hold Time
Write Disable to Output in Low-Z
Write Enable to Output in High-Z
tWLGHWH
tAVGHWH
Symbol
tWLWH
tWHQX
tAVWH
tAVWH
tDVWH
tWHDX
tAVQX
tGLQV
tGLQX
tGHQZ
tELWH
tWLQZ
tEHQZ
tAVAV
tAVQV
tELQV
tELQX
tAVAV
EDI8L21664V Rev. 0 1/98 ECO #9704
Min Max
10
10
10
4
3
3
0
8
8
0
0
8
6
0
3
10ns
10
10
5
5
5
5
12ns
Min Max
12
12
10
4
4
0
8
8
0
0
8
6
0
4
12
12
6
6
6
6
15ns
Min Max
15
15
11
4
4
0
9
9
0
0
9
7
0
5
15
15
7
7
7
7
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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