HYB5116405BJBT-50- SIEMENS [Siemens Semiconductor Group], HYB5116405BJBT-50- Datasheet - Page 10

• Manufacturer Part Number: HYB5116405BJBT-50-
• Description: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

AC Characteristics
T
Parameter
Hyper Page Mode (EDO) Read-modify-Write Cycle
Hyper page mode (EDO) read-
write cycle time
CAS precharge to WE
CAS-before-RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS t
CAS-before-RAS Counter Test Cycle
CAS precharge time
Self Refresh Cycle
RAS pulse width
RAS precharge
CAS hold time
Test Mode
Write command setup time
Write command hold time
CAS hold time
Semiconductor Group
A
= 0 to 70 °C,
V
CC
= 5 V
(cont’d)
10 %, t
5)6)
T
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
= 2 ns
PRWC
CPWD
CSR
CHR
RPC
WRP
WRH
CPT
RASS
RPS
CHS
WTS
WTH
CHRT
min.
58
41
10
10
5
10
10
35
100k _
95
-50
10
10
30
10
-50
max. min.
–
–
–
–
–
–
–
–
_
_
–
–
–
HYB5116(7)405BJ/BT-50/-60/-70
Limit Values
68
49
10
10
5
10
10
40
100k _
110
-50
10
10
30
-60
max. min.
–
–
–
–
–
–
–
–
_
_
–
–
–
77
56
10
10
5
10
10
40
100k _
130
-50
10
10
30
4M x 4-EDO DRAM
-70
max.
–
–
–
–
–
–
–
–
_
_
–
–
–
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
17
17
17
16E