HYB5116405BJBT-50- SIEMENS [Siemens Semiconductor Group], HYB5116405BJBT-50- Datasheet - Page 2

• Manufacturer Part Number: HYB5116405BJBT-50-
• Description: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

The HYB 5116(7)405BJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The
HYB 5116(7)405BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as
advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 5116(7)405BJ/BT to be packaged in a standard
SOJ 26/24 or TSOPII-26/24 plastic package, both with 300 mil width. These packages provide high
system bit densities and are compatible with commonly used automatic testing and insertion
equipment. System-oriented features include single + 5 V ( 10 %) power supply, direct interfacing
with high-performance logic device families such as Schottky TTL.
Ordering Information
Type
HYB 5116405BJ-50
HYB 5116405BJ-60
HYB 5116405BJ-70
HYB 5116405BT-50
HYB 5116405BT-60
HYB 5116405BT-70
HYB 5117405BJ-50
HYB 5117405BJ-60
HYB 5117405BJ-70
HYB 5117405BT-50
HYB 5117405BT-60
HYB 5117405BT-70
Pin Names
A0-A11
A0-A9
A0-A10
RAS
OE
I/O1-I/O4
CAS
WE
V
V
N.C.
Semiconductor Group
CC
SS
Row Address Inputs for HYB5116405
Column Address Inputs for HYB5116405
Row and Column Address Inputs for HYB5117405
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply (+ 5 V)
Ground (0 V)
not connected
Ordering Code
Q67100-Q1098
Q67100-Q1099
Q67100-Q1100
on request
on request
on request
Q67100-Q1101
Q67100-Q1102
Q67100-Q1103
on request
on request
on request
Package
P-SOJ-26/24 300 mil
P-SOJ-26/24 300 mil
P-SOJ-26/24 300 mil
P-TSOPII-26/24 300mil
P-TSOPII-26/24 300mil
P-TSOPII-26/24 300mil
P-SOJ-26/24 300 mil
P-SOJ-26/24 300 mil
P-SOJ-26/24 300 mil
P-TSOPII-26/24 300mil
P-TSOPII-26/24 300mil
P-TSOPII-26/24 300mil
2
HYB5116(7)405BJ/BT-50/-60/-70
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
4M x 4-EDO DRAM