HCTS7266D/SAMPLE INTERSIL [Intersil Corporation], HCTS7266D/SAMPLE Datasheet
HCTS7266D/SAMPLE
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HCTS7266D/SAMPLE Summary of contents
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August 1995 Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm • Single Event Upset (SEU) Immunity < (Typ) • Dose Rate Survivability: >1 ...
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Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...
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TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Propagation Delay TPHL VCC = 4.5V, VIH = 3.0V Input to Output VIL = 0V TPLH VCC = 4.5V, VIH = 3.0V VIL = 0V NOTES: 1. All voltages referenced to device ...
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TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND Noise Immunity FN VCC = 4.5V, VIH = 2.25V, Functional Test VIL = 0.80V @ 200K RAD, (Note ...
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CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note 10 ...
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Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...
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AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 All Intersil semiconductor products are manufactured, assembled ...
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Die Characteristics DIE DIMENSIONS mils 2.20 x 2.24mm METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...