SI8472DB VISHAY [Vishay Siliconix], SI8472DB Datasheet - Page 2

no-image

SI8472DB

Manufacturer Part Number
SI8472DB
Description
N-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8472DB-T2-E1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si8472DB
Vishay Siliconix
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
www.vishay.com
2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
b
a
a
J
a, b
c, d
= 25 °C, unless otherwise noted)
a
V
Symbol
V
R
V
GS(th)
I
t
t
t
t
I
I
C
V
GS(th)
D(on)
DS(on)
C
C
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
DS
Q
g
R
DS
oss
t
t
t
t
iss
rss
gd
fs
gs
r
f
r
f
g
g
This document is subject to change without notice.
/T
/T
J
J
I
V
I
D
D
V
V
V
DS
t = 10 s
t = 10 s
DS
 1.5 A, V
DS
DS
 - 1.5 A, V
= 10 V, V
= 20 V, V
V
V
V
V
= 10 V, V
= 10 V, V
V
V
V
V
V
V
V
DD
DD
DS
DS
V
V
GS
DS
GS
GS
GS
DS
DS
GS
GS
Test Conditions
- 5 V, V
= - 10 V, R
= - 10 V, R
= V
= 0 V, V
= 0 V, I
= 4.5 V, I
= 1.5 V, I
= 0.1 V, f = 1 MHz
= 20 V, V
= 10 V, I
I
= 2.5 V, I
= 1.8 V, I
D
GEN
GS
GS
GEN
= 250 µA
GS
GS
GS
, I
= - 4.5 V, R
= 4.5 V, I
= 0 V, T
D
= 0 V, f = 1 MHz
= 8 V, I
D
GS
= - 8 V, R
Symbol
GS
D
= 250 µA
D
D
= 250 µA
GS
R
D
D
L
L
= 1.5 A
= 1.5 A
= 0.5 A
= ± 8 V
thJA
= 4.5 V
= 6.7 
= 6.7 
= 1 A
= 1 A
= 0 V
D
J
D
= 70 °C
= 1.5 A
= 1.5 A
g
g
= 1 
= 1 
Typical
125
55
Min.
0.4
20
10
0.036
0.041
0.046
0.050
Maximum
Typ.
- 2.6
630
105
6.8
0.8
1.1
5.3
16
16
42
12
15
30
10
15
30
10
7
5
160
S11-1387-Rev. A, 11-Jul-11
70
Document Number: 63300
www.vishay.com/doc?91000
± 100
0.044
0.050
0.056
0.070
Max.
0.9
10
18
11
15
30
60
20
10
30
60
20
1
°C/W
Unit
mV/°C
Unit
nA
µA
nC
pF
ns
V
V
A
S

Related parts for SI8472DB