SI8901EDB_06 VISHAY [Vishay Siliconix], SI8901EDB_06 Datasheet
SI8901EDB_06
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SI8901EDB_06 Summary of contents
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Bi-Directional P-Channel 20-V (D-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. model is extracted and optimized over ...
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SPICE Device Model Si8901EDB Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Turn-On Delay Time Rise Time Turn-Off Delay Time ...
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COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 72950 S-60073Rev. B, 23-Jan-06 SPICE Device Model Si8901EDB Vishay Siliconix =25°C UNLESS OTHERWISE NOTED) J www.vishay.com 3 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...