BSS225_11 INFINEON [Infineon Technologies AG], BSS225_11 Datasheet

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Type ® SIPMOS Small-Signal-Transistor Feature • n-channel • enhancement mode • Logic level • dv /dt rated Type Package BSS225 SOT89 Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous drain current Pulsed drain current Reverse diode ...

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Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance zero-hour rated, see note at p.8 ...

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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

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Power dissipation =f tot A 1 0.75 0.5 0. Safe operating area =f =25 ° parameter limited by on-state resistance ...

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Typ. output characteristics =f =25 ° parameter 0.3 0.25 0.2 0.15 0.1 0. Typ. transfer characteristics =f |>2 ...

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Drain-source on-state resistance = DS(on 130 120 110 100 % -60 - Typ. capacitances C ...

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Typ. gate charge =f =0.1 A pulsed V GS gate D parameter 0.5 1 1.5 Q Rev. 1.23 14 Drain-source breakdown voltage =f(T V BR(DSS) 700 680 ...

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Package Outline: Footprint: Dimensions in mm note: Due to small size of the package, creeping currents between leads external to the package can occur in the application. Extra protection from contamination for the package (i.e. protective laquer) is necessary to ...

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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...