BSS225_11 INFINEON [Infineon Technologies AG], BSS225_11 Datasheet - Page 7

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BSS225_11

Manufacturer Part Number
BSS225_11
Description
SIPMOS Small-Signal-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Rev. 1.23
13 Typ. gate charge
V
parameter: V
GS
=f(Q
12
10
8
6
4
2
0
0
gate
); I
0.5
DD
D
=0.1 A pulsed
1
1.5
Q
gate
120 V
2
[nC]
2.5
3
480 V
3.5
300 V
page 7
4
14 Drain-source breakdown voltage
V
BR(DSS)
700
680
660
640
620
600
580
560
540
520
500
-60
=f(T
j
); I
-20
D
=250 µA
20
T
j
[°C]
60
100
BSS225
140
2011-03-08

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